Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy

Reis, Françoise T.; Mencaraglia, Denis; Saad, Soha; Séguy, Isabelle; Oukachmih, Mimoun; Jolinat, Pascale; Destruel, P.

doi:10.1016/s0379-6779(02)01284-5

Cited by 46 publications

(36 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The experimental details are identical to those previously reported [5], except the thickness of the CuPc layers, 100 nm in the present work. The film thickness was confirmed by interference profilometry.…”

Section: Methodssupporting

confidence: 54%

“…Cross-checks between different electrical characterization methods are then needed, in order to select among the different possible interpretations of the experimental results. In this paper we extend to different temperatures our previously reported analysis on the correlation between dc current-voltage measurements and capacitance spectroscopy performed on ITO/CuPc/Al devices [5].…”

Section: Introductionmentioning

confidence: 55%

“…1, we present the spectroscopy of the density of localized states in the gap of the CuPc thin film for temperatures between 243 and 273 K, obtained from the capacitance spectra as a function of frequency and temperature, which is shown in the insert. This spectroscopy, representative of the average behavior in the 193-293 K range is based on the model of Walter et al [6], as discussed in our previous work on the same type of device [5]. The zero energy corresponds to the HOMO level position.…”

Section: Capacitance Spectroscopymentioning

confidence: 99%

See 2 more Smart Citations

Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Reis

Mencaraglia

Saad

et al. 2004

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

Section: Methodssupporting

confidence: 54%

Section: Introductionmentioning

confidence: 55%

Section: Capacitance Spectroscopymentioning

confidence: 99%

See 1 more Smart Citation

Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Reis

Mencaraglia

Saad

et al. 2004

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

“…As shown in the inset of Fig. 4.5, the difference in energy level between the work function of an ITO anode (∼4.4 eV) and the highest occupied molecular orbital of ZnPc (5.17 eV [51]) at the ITO/ZnPc:C 60 interface, can be reduced significantly after the ITO anode is modified with Ag nanoparticles/CF X . The reduced electronic barrier at the ITO/CF X -Ag nanoparticles /ZnPc:C 60 interface is favorable for charge extraction in OSCs.…”

Section: Effect Of Ito Surface Electronic Properties On Osc Performancementioning

confidence: 95%

Organic and Excitonic Solar Cells

Zhu

2014

Springer Series in Materials Science

View full text Add to dashboard Cite

Bulk heterojunction organic solar cells (OSCs) are an attractive alternative to silicon based solar cells due to low cost solution fabrication processes. The efficiencies and lifetimes of OSCs are not yet high enough for them to be commercially viable, but significant research effort has been devoted to improving the performance of OSCs through materials innovation and new device designs. It is known that the optical absorption in organic solar cells is limited due to the mismatch between the charge transport scale and optical absorption depth. There are two major research approaches aimed at improving the performance of OSCs. One approach is focused on the development of new organic compounds with tailored energy levels in order to increase the efficiency of OSCs through improved spectral response over the long wavelength region. The other is to realize broadband absorption enhancement in OSCs through light trapping effects. After a brief overview of basics of OSCs, the charge transport properties, different approaches including incorporating metal nanoparticles and surface plasmonic structures to enhancethe absorption in OSCs will be discussed. Apart from the encouraging results in achieving high efficiency for OSCs, realizing stabile OSC performance over a long operation lifetime also attracts a significant research effort. A comprehensive study on the degradation mechanisms of OSCs is also presented in the last part of the chapter.

show abstract

“…The existence of these continuous energy trap states was mentioned with various energy density of states (DOS). The functional dependence can be for example exponential, single gaussian or multiple gaussian [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Small‐signal characteristics of organic semiconductors with continuous energy distribution of traps

Schmeits

Nguyen

2005

Physica Status Solidi (a)

View full text Add to dashboard Cite

The electrical characteristics of organic light emitting devices containing a continuous distribution of trap states in the forbidden gap are obtained by numerically solving the basic semiconductor equations for the steady state and under small-signal conditions. The spatially-dependent occupied trap states, which are described by an explicit density of states function, modify the charge distribution within the structure and the shape of the electric field and the carrier current densities. The effect of the modulation frequency, the applied voltage and the device temperature are studied for a hole conducting layer with a trap density of states consisting of a double gaussian profile and for a given set of microscopic parameters including the carrier mobilities and thermal velocities, the capture cross sections, and the residual shallow impurity concentration. The frequency-dependent loss and capacitance curves are obtained for various experimental conditions, like temperature and applied steady-state voltage. Effects of parameters describing electrical contacts and trap density of states are shown. Such results are particularly useful for the analysis of experimental electrical characteristics obtained by thermal admittance spectroscopy.

show abstract

Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy

Cited by 46 publications

References 23 publications

Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Organic and Excitonic Solar Cells

Small‐signal characteristics of organic semiconductors with continuous energy distribution of traps

Contact Info

Product

Resources

About