Search citation statements
Paper Sections
Select...
1
Citation Types
0
1
0
Year Published
2015
2016
Publication Types
Select...
2
Relationship
0
2
Authors
Journals
Cited by 2 publications
(1 citation statement)
References 14 publications
0
1
0
“…The band diagrams at the InGaAs/InP and InAs/Si hetero-interfaces are schematically shown in Figure 3. The InGaAs/InP material system has been extensively studied experimentally, and measured CB offsets were found to range from 0.21 eV to 0.3 eV (21,22,23). In this work, the CB offset is set to 0.27 eV following Ref.…”
Section: Simulation Set-up and Tcad Modelmentioning
confidence: 99%
“…The band diagrams at the InGaAs/InP and InAs/Si hetero-interfaces are schematically shown in Figure 3. The InGaAs/InP material system has been extensively studied experimentally, and measured CB offsets were found to range from 0.21 eV to 0.3 eV (21,22,23). In this work, the CB offset is set to 0.27 eV following Ref.…”
Section: Simulation Set-up and Tcad Modelmentioning
confidence: 99%
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
