“…Annealing in Ar at 500-900C, 1 h. Ishikawa et al, 2002, Tsuji et al 2002a, 2002b, 2003a, 2005a, 2005b, Arai et al, 2003 SiO 2 , 1998, 1999a, 1999b, 1999c, 2000a, 2000b, 2000c, 2001a, 2001b, 2001c, 2002b, 2002c, 2002b, 2003a, 2003b, 2003c, 2004a,2005b, 2008a, 2008b, 2009aHole et al 1999Ganeev at al. 2003a, 2003b,2004a, 2004c The range of high-dose implantation may be divided into two characteristic dose subranges. In the range 10 15 ≤ ~F 0 ≤ 10 17 ion/cm 2 , the concentration of Ag ions exceeds the solubility limit of metal atoms in matrices and the system relaxes by nucleation and growth of MNPs (Fig.…”