2010
DOI: 10.1016/j.mee.2009.11.165
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Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas

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Cited by 14 publications
(6 citation statements)
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“…2,6,10,11 The resulting nonideal surface after etching can adversely affect profile morphology and lead to interconnect failure. Postetch residue from BCB has been shown to also increase contact resistance and is unable to be removed by the typical O 2 ashing processes.…”
Section: Resultsmentioning
confidence: 99%
“…2,6,10,11 The resulting nonideal surface after etching can adversely affect profile morphology and lead to interconnect failure. Postetch residue from BCB has been shown to also increase contact resistance and is unable to be removed by the typical O 2 ashing processes.…”
Section: Resultsmentioning
confidence: 99%
“…tenth of microns. We first studied BCB etching with a photoresist mask using both fluorine and oxygen such as SF 6 0 2 gas mixture (Chen et al, 2010): the fluorine removes the silicon in BCB and the oxygen reacts with the carbon and organic content. We analyzed the influence of the plasma etching parameters, i.e.…”
Section: Dielectric Filling Of the Trenchesmentioning
confidence: 99%
“…In comparison with the wet etching technique in our previous work (Tsai et al, 2010), it is more easy to control the etched depth and profile of the isotropic trench. The purpose of the isotropic etching is achieved by adjusting the gaseous quantity of RIE, i.e., sulfur hexafluoride (SF 6 ), oxygen (O 2 ) and argon (Ar) (Chen et al, 2010). Because the passive layer is created by the interaction of the silicon and O 2 so the sidewall of the trench can be protected, i.e., the anisotropic trench can be constructed.…”
Section: U-type Solenoidmentioning
confidence: 99%