Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates

Murooka, Takuya; Hatano, Mutsuko; Yaita, Junya; Makino, Toshiharu; Ogura, Masahiko; Kato, Hiromitsu; Yamasaki, Satoshi; Natal, Meralys; Saddow, Stephen E.; Iwasaki, Takayuki

doi:10.1109/ted.2019.2952910

Cited by 14 publications

(6 citation statements)

References 35 publications

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“…The σ in this study was slightly larger than SBDs comprising SiC (0.092) and GaN (0.143), and close to the reported value of diamond (0.227). 17,29,30) The imperfection of the Schottky/semiconductor interface is suggested as origin of the larger σ. Further improvement of the interface structure, e.g.…”

Section: Resultsmentioning

confidence: 98%

“…15) Previously, the device performance of SBDs on heteroepitaxial diamond has been reported. 16,17) In these reports, good device properties with large rectifying actions and low leakage current were demonstrated, however, the in-plane uniformity was obviously degraded. Ohmic-like leakage current was observed when the electrode size increased.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Sittimart

Ohmagari

Yoshitake

2021

Jpn. J. Appl. Phys.

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In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer layer to suppress killer defects was inserted. All SBDs exhibited excellent rectifying actions with suppressed leakage current. The in-plane uniformity was improved after the insertion of the buffer layer. Forward characteristics were fitted by thermionic emission theory and Tung’s model in the temperature range from 300 to 480 K. The perfection of the Schottky-diamond interface is discussed. Moreover, the SBDs exhibited a high breakdown voltage with a sudden increase in current at 375 V, which is the highest value reported for heteroepitaxial diamond. These results indicate that heteroepitaxial substrates are a promising alternative for large-area low-cost diamond electronics.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Sittimart

Ohmagari

Yoshitake

2021

Jpn. J. Appl. Phys.

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“…To reduce the dislocation density, the metal impurity-incorporated buffer layer was integrated to fabricate pseudovertical Schottky diodes by Sittimart et al [181] The rectification ratio exceeds eight orders of magnitude and the breakdown field strength was 1.7 MV cm À1 . Murooka et al have demonstrated and characterized Schottky diodes on heteroepitaxial films grown on 3C-SiC/Si substrates [183] and obtained a rectification ratio above 10 9 at AE5 V. Metal-oxide-semiconductor field-effect transistor (MOSFET) have been recently developed by Saha et al [184] with a Baliga's figure-of-merits of 145 MW cm À2 and inversion channel MOSFET by Zhang et al [185] Recently, modulation-doped diamond FETs have been achieved using NO 2 delta doping in Al 2 O 3 gate layer associated with a mobility of 2465 cm 2 V À1 s À1 near the threshold voltage. [186] These recent developments demonstrate the maturity reached by the heteroepitaxial diamond and its potential for the development of lower cost devices given the increasing size of the substrates.…”

Section: Recent Trends In Applicationsmentioning

confidence: 99%

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Arnault

Saada

Ralchenko

2021

Physica Rapid Research Ltrs

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With its outstanding physical properties, single‐crystal diamond is the material of choice for future power electronics and quantum devices. The later application field is based on the optical and spin properties of color centers hosted in diamond lattice. Two synthesis methods are currently developed to grow high‐quality diamond: high pressure and high temperature (HPHT) synthesis and chemical vapor deposition (CVD). Herein, the state of the art of single‐crystal diamond growth by CVD, either starting with diamond substrate (homoepitaxy) or controlling diamond epitaxial nucleation on a foreign substrate (heteroepitaxy) is described. Progress on substrates, dislocation propagation, and reduction of structural defects, doping, upscaling, and applications are reviewed. In light of recent progress, future challenges and the respective roles of homoepitaxial and heteroepitaxial materials in the applications roadmap are discussed.

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“…Regarding this issue, using heteroepitaxial diamond substrates would be one solution. Diamond epitaxy has been studied for decades and different materials have been explored for heteroepitaxial diamond growth [45][46][47][48][49][50][51][52][53][54][55][56]. Among them, the silicon (Si)-based substrate is one promising candidate for fabrication of diamond power devices due to its large wafer size and low cost.…”

Section: Inversion-type P-channel Mosfets On Heteroepitaxial Diamond Substratesmentioning

confidence: 99%

“…Among them, the silicon (Si)-based substrate is one promising candidate for fabrication of diamond power devices due to its large wafer size and low cost. Kawashima [47,54]. However, the potential of the inversiontype heteroepitaxial diamond MOSFET has not been evaluated yet.…”

Section: Inversion-type P-channel Mosfets On Heteroepitaxial Diamond Substratesmentioning

confidence: 99%

Inversion-type p-channel diamond MOSFET issues

Zhang

Matsumoto

Yamasaki

et al. 2021

Journal of Materials Research

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This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (NP) of the n-type body on field-effect mobility (μFE) and interface state density (Dit) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low μFE and one main reason is high Dit. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low C–V method and the conductance method, providing further insights into the trap properties at Al2O3/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs. Graphic abstract

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Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates

Cited by 14 publications

References 35 publications

Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Inversion-type p-channel diamond MOSFET issues

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