The charge-state control of nitrogen-vacancy (NV) centers in diamond is very important toward its applications because the NV centers undergo stochastic charge-state transitions between the negative charge state (NV À ) and the neutral charge state (NV 0 ) of the NV center upon illumination. In this letter, engineering of the Fermi level by a nin diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic (i) layer region. By changing the size (d) of the i-layer region between the phosphorus-doped n-type layer regions (nin) from 2 lm to 10 lm, we realized the gradual change in the NV À charge-state population in the i-layer region from 60% to 80% under 532 nm excitation, which can be attributed to the band bending in the i-layer region. Also, we quantitatively simulated the changes in the Fermi level in the i-layer region depending on d with various concentrations of impurities in the i-layer region.

Nitrogen-vacancy (NV) centers in diamond work as a quantum electrometer. Using an ensemble state of NV centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage was measured while applying a transverse magnetic field. The response of the energy level shift against the electric field was significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, we obtained the components of the electric field generated in the device.

No abstract

No abstract

We demonstrate a photoelectrical readout of negatively charged nitrogen-vacancy (NV−) centers by utilizing a lateral diamond p–i–n diode structure. We found that the photocarriers generated at NV centers are efficiently extracted in the depletion layer even at zero voltage. The transport mechanism for photoexcited minority carriers was investigated by varying the nitrogen ion implantation dose. The minority carrier diffusion length decreased when the photocarriers passed through the implantation region, particularly at a high nitrogen ion dose. From photoelectrically detected magnetic resonance (PDMR) measurements, the photocurrent was found to exhibit a minimum at approximately 2.87 GHz upon microwave irradiation with a contrast of 12%, while this dip was observed to split upon the application of a static magnetic field. The PDMR signal was found to depend on the measurement position. This study paves the way for efficient electrical detection for quantum sensors based on device technologies.