2014
DOI: 10.1088/0268-1242/29/7/075009
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Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Abstract: Engineered or 'virtual' substrates are of interest to extend the range of epitaxially-grown semiconductor heterostructures available for device applications. To this end, elastically strain-relaxed square features up to 30 μm in size and having an in-plane lattice constant as much as 0.49% larger than the lattice constant of GaAs were fabricated from MOCVD-grown GaAs/In 0.08 Ga 0.92 As/GaAs heterostructures by the in-place bonding method, using either AlAs or Al 0.7 Ga 0.3 As as the sacrificial layer. TEM imag… Show more

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Cited by 3 publications
(17 citation statements)
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“…The registration error of bonded Si/SiGe/Si features with respect to their initial position defined by photolithography was found to be <30 nm, the same as for control wafers where the features were defined but the sacrificial oxide layer had not been removed [25]. A similar fabrication process was used for GaAs/In 0.08 Ga 0.92 As/GaAs membranes bonded to a GaAs substrate, where the sacrificial layer was either AlAs or Al 0.7 Ga 0.3 As [26][27][28][29]. Devices can subsequently be fabricated on the bonded features or they can be used as 'virtual substrates' for the growth of device layer structures.…”
Section: Introductionmentioning
confidence: 77%
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“…The registration error of bonded Si/SiGe/Si features with respect to their initial position defined by photolithography was found to be <30 nm, the same as for control wafers where the features were defined but the sacrificial oxide layer had not been removed [25]. A similar fabrication process was used for GaAs/In 0.08 Ga 0.92 As/GaAs membranes bonded to a GaAs substrate, where the sacrificial layer was either AlAs or Al 0.7 Ga 0.3 As [26][27][28][29]. Devices can subsequently be fabricated on the bonded features or they can be used as 'virtual substrates' for the growth of device layer structures.…”
Section: Introductionmentioning
confidence: 77%
“…A method that can be implemented over very large areas has been referred to as in-place bonding or solution bonding [25][26][27][28][29]. Here, the thin semiconductor membrane, consisting of a single layer or a series of layers, is grown epitaxially on a sacrificial layer.…”
Section: Introductionmentioning
confidence: 99%
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“…Raman scattering from phonons in semiconductors is an indirect technique for probing the strain 13 14 . This technique requires no sample preparation and is non-destructive 15 .…”
mentioning
confidence: 99%
“…In electronic Raman scattering, the Raman shift of the incident laser probe is related to an electronic transition as opposed to a vibrational transition in conventional Raman scattering 8 13 14 . One example of this effect is the interband electronic Raman scattering process 19 20 21 , which is shown in Fig.…”
mentioning
confidence: 99%