2000
DOI: 10.1016/s0040-6090(00)01435-8
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Characterization of ternary Al–B–N films

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Cited by 28 publications
(18 citation statements)
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“…The interest on Cr-Al-O responds to the possibility of formulating at temperatures in the range accessible by PVD super hard, thermally stable and oxidation resistance structures exhibiting the corundum a-Al 2 O 3 structure. The reason is that Cr 2 O 3 oxides have the same crystallization group R3c than that of a-Al 2 O 3 , and they can be synthesized at moderate temperatures between 400 and 600°C by magnetron sputtering and cathodic arc evaporation [81,82]. Najafi et al [83] reported on a crystalline phase transition from a cubic structure c-(Cr x Al 1Àx ) 2 O 3 to the corundum a-(Cr x Al 1Àx ) 2 O 3 along a coating thickness of stoichiometry Al 0.22 Cr 0.20 O 0.57 from a 2 microns thick.…”
Section: Novel Coating Designsmentioning
confidence: 99%
“…The interest on Cr-Al-O responds to the possibility of formulating at temperatures in the range accessible by PVD super hard, thermally stable and oxidation resistance structures exhibiting the corundum a-Al 2 O 3 structure. The reason is that Cr 2 O 3 oxides have the same crystallization group R3c than that of a-Al 2 O 3 , and they can be synthesized at moderate temperatures between 400 and 600°C by magnetron sputtering and cathodic arc evaporation [81,82]. Najafi et al [83] reported on a crystalline phase transition from a cubic structure c-(Cr x Al 1Àx ) 2 O 3 to the corundum a-(Cr x Al 1Àx ) 2 O 3 along a coating thickness of stoichiometry Al 0.22 Cr 0.20 O 0.57 from a 2 microns thick.…”
Section: Novel Coating Designsmentioning
confidence: 99%
“…One is to use ionized PVD (I-PVD) techniques [1], an approach that has yielded low-temperature-deposited θ-, κ-, and γ-alumina films [2,3,4,5,6,7] with higher crystallinity than for conventional PVD, and has permitted growth of α-Al 2 O 3 at temperatures below 700 °C [8,9,10]. The second approach is to promote the nucleation of α-Al 2 O 3 either by a crystallographic template such as α-Cr 2 O 3 [11,12,13] or in solid solution α-(Cr,Al) 2 O 3 [14,15,16,17]. We have previously investigated [5,6] amorphous and γ-alumina thin films deposited by the I-PVD technique inductively coupled plasma magnetron sputtering (ICP-MS), which uses an rf coil to increase the degree of ionization in the deposition flux [18].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, thin w-BAN films of varying stoichiometry have been synthesized by reactive sputter deposition. 4,5 In here we study theoretically some of the material properties of wurtzite B 0.125 Al 0.875 N. The results are compared with those of the Vegard's rule 6 for the lattice parameters and, the stiffness and piezoelectric constants. During this analysis we further examine the configurational dependence of these quantities.…”
mentioning
confidence: 98%