Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.

doi:10.1016/j.sab.2007.04.010

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…During the fabrication process of integrated circuits, dopant atoms segregate to energetically favourable sites at the interface between silicon and silicon dioxide. TXRF in combination with successive etching was used by Steen et al 92 to determine the concentration profile of implanted As at the interface between Si and SiO 2 . With other methods such as SIMS, Medium Energy Ion Scattering, X-ray Photo-electron Spectroscopy, Augerelectron Spectrometry or Rutherford Backscatter Spectroscopy the shape of the concentration profile at the interface remains elusive.…”

Section: Txrfmentioning

confidence: 99%

Atomic spectrometry update. X-ray fluorescence spectrometry

West

Ellis²,

Kregsamer

et al. 2008

J. Anal. At. Spectrom.

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This annual review of X-ray fluorescence covers developments over the period 2007-2008 in instrumentation and detectors, matrix correction and spectrum analysis procedures, X-ray optics and micro-fluorescence, synchrotron XRF, TXRF, portable XRF and on-line applications as assessed from the published literature. The trend set in previous years continues with an increase in the number of papers published on applications for XRF, including sample preparation, geological, environmental, archaeological, forensic, biological, clinical, thin films, chemical state and speciation studies. Earlier literature has not been ignored in that some of Archimedes oldest writing, previously hidden from sight in a medieval prayer book has now been revealed thanks to the power of modern m-SRXRF. X-ray optics now benefit from the use of poly-capillaries systems, equipment portability has been extended to include the TXRF configuration and readers will find several papers on the use of both two and three dimensional imaging to support environmental, geological and biological studies. The writing team would welcome feedback from readers of this review and invite you to complete the Atomic Spectrometry Updates questionnaire on www.asureviews.org. 9 Applications 9.1 Sample preparation 9.2 Geological and industrial minerals 9.3 Environmental 9.3.1 Aerosols and particulates 9.3.2 Consequences of industrial activity 9.3.3 Other environmental studies 9.4 Archaeological, cultural heritage and forensic 9.5 Industrial 9.6 Clinical and biological 9.7 Thin films and coatings 9.8 Chemical state and speciation 10 Abbrevations 11 References

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Section: Txrfmentioning

confidence: 99%

Atomic spectrometry update. X-ray fluorescence spectrometry

West

Ellis²,

Kregsamer

et al. 2008

J. Anal. At. Spectrom.

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show abstract

“…The technique of TXRF was also discussed by Steen and co-workers. 274 These workers described how dopant atoms segregate to energetically more favourable sites at the interface between silicon and silicon dioxide during the fabrication process and that, since device dimensions are becoming increasingly small, the measurement is becoming increasingly more difficult. The authors described a method by which TXRF was used with successive etching to determine the impurity profile at the Si/SiO 2 interface with a resolution of approximately 1 nm.…”

Section: Variousmentioning

confidence: 99%

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

Charlton¹,

Fisher²,

Goodall³

et al. 2008

J. Anal. At. Spectrom.

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“…However, this information is not sufficient to reconstruct the profile shape unambiguously. 9 At sufficiently large incidence angles, the penetration depth of the X-rays becomes large enough to excite all arsenic atoms with almost the same intensity. The count rate of the fluorescence signal is then a highly precise measure for the total sheet concentration of arsenic in the sample.…”

Section: Gi-xrfmentioning

confidence: 99%

Detailed arsenic concentration profiles at Si/SiO2 interfaces

Pei

Duscher

Steen

et al. 2008

Journal of Applied Physics

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The pile-up of arsenic at the Si/SiO(2) interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be similar to 1 x 10(15) cm(-2) for an implanted dose of I X 1016 cm-2 with a maximum concentration of similar to 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects

show abstract

Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

Cited by 9 publications

References 10 publications

Atomic spectrometry update. X-ray fluorescence spectrometry

Atomic spectrometry update. X-ray fluorescence spectrometry

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

Detailed arsenic concentration profiles at Si/SiO2 interfaces

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