Characterization of the oxidized indium thin films with thermal oxidation

Lee, Min-Suk; Choi, Won Jun; Kim, Eun Kyu; Kim, Chun Keun; Min, Seung-Kee

doi:10.1016/0040-6090(96)08742-1

Cited by 121 publications

(80 citation statements)

References 12 publications

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“…It is well understood that photoluminescence spectra depends on the structure and the stoichiometry of the prepared lms [16]. Therefore the PL results conrm that the obtained optimum In 2 O 3 Fig.…”

Section: To 600supporting

confidence: 68%

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

2012

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Indium oxide (In2O3) thin lms were deposited on glass substrate by varying substrate temperature in the range of 400600• C using the spray pyrolysis technique. In this research, physical properties of indium oxide thin lms were studied and then nanocrystalline sizes at dierent substrate temperature were deeply compared and investigated. All lms were characterized at room temperature using X-ray diraction, scanning electron microscopy, atomic force microscopy, photoluminescence, the Hall eect and UV-visible spectrophotometer. The optimal substrate temperature to obtain lms of high crystallographic quality was 575• C, for this temperature, the electrical resistivity was in the order of ρ = 0.147 Ω cm. For comparing optical transmittance and electrical conductivity the best gure of merit of the lms was achieved at 575•

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Section: To 600supporting

confidence: 68%

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

2012

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“…[12,13] The intermediate nematic state is able to dynamically respond to external fields [14±17] and form periodic defects. We report the formation of periodic NØel wall patterns [15,16,18] via directional solvent evaporation in a lyotropic nematic solution of a rod±coil diblock copolymer. Subsequent microphase separation and ordering of the rod-like chains yield an unprecedented hierarchical morphology consisting of crystals of rod block (unit cell~1 nm), block copolymer microdomains (layer periodicity~50 nm), and NØel domain walls (wall periodicity~1000 nm).…”

Section: Methodsmentioning

confidence: 99%

“…This is similar to In 2 O 3 polycrystallites that exhibit an orange emission peaking at 637 nm. [16] An intense orange emission centered at 617 nm is visible for the In 2 O 3 nanotubes and a marked shoulder appears at 593 nm. A marginal blue shift of the entire peak took place for the nanotube sample.…”

Section: Single-crystalline In 2 O 3 Nanotubes Filled With Inmentioning

confidence: 98%

Single‐Crystalline In₂O₃ Nanotubes Filled with In

Li¹,

2003

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Single‐crystalline In2O3 nanotubes with cubic structure were synthesized via a physical vapor depostion process. The nanotubes grew along the 〈111〉 direction and were continuously filled with metallic In (see Figure). Photoluminescence measurement results displayed strong orange emission. Indium‐filled In2O3 nanotubes represent an exciting system and offer great potential for application in electronic devices or “nanothermometers”.

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“…The visible red PL emission of In 2 O 3 at 10 K is similar to that of In 2 O 3 thin films that exhibited orange emission at 637 nm. 16 Since the diameters of In 2 O 3 nanowires are much larger than the Bohr radius of In 2 O 3 (2.14 nm), quantum-confinement effects can be excluded. Therefore, the observed PL emission could be attributed to a small amount of oxygen vacancies in the In 2 O 3 nanowire crystal structure.…”

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confidence: 99%

Synthesis, Characterization, and Optical Properties of In₂O₃ Semiconductor Nanowires

et al. 2007

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In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 °C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure.

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Characterization of the oxidized indium thin films with thermal oxidation

Cited by 121 publications

References 12 publications

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

Single‐Crystalline In₂O₃ Nanotubes Filled with In

Synthesis, Characterization, and Optical Properties of In₂O₃ Semiconductor Nanowires

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Characterization of the oxidized indium thin films with thermal oxidation

Cited by 121 publications

References 12 publications

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

Single‐Crystalline In2O3 Nanotubes Filled with In

Synthesis, Characterization, and Optical Properties of In2O3 Semiconductor Nanowires

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Product

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Single‐Crystalline In₂O₃ Nanotubes Filled with In

Synthesis, Characterization, and Optical Properties of In₂O₃ Semiconductor Nanowires