Characterization of the Surface of Silver Ion-Implanted Silicon by Optical Reflectance

Степанов, А. Л.; Vorobev, V. V.; Нуждин, В. И.; Валеев, В. Ф.; Osin, Yu. N.

doi:10.1007/s10812-017-0545-9

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Cited by 7 publications

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“…Nowadays the ion implantation is still an important tool in modern electronics [1][2][3][4]. Influence of the implantation process on different physical parameters is measured with several techniques.…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Dorywalski,

Chrobak,

Maliński

2020

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This work presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCA and PTR techniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe + and Ge + high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

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Section: Introductionmentioning

confidence: 99%