Characterization of TiO2 Thin Film Deposited by RF Sputtering Method

Tiwary, Rohit; Vyas, Sumit; Shubham, Kumar; Chakrabarti, P.

doi:10.1109/icdccom.2014.7024703

Cited by 2 publications

(1 citation statement)

References 20 publications

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“…The Pt(10 nm)/TiO2(4 nm)/Pt(10 nm) exponential selector was fabricated with a twostep lithography process as shown in The TiO2 film has several polymorphs, such as rutile, anatase and brookite phases [190][191][192][193]. Rutile is the most stable phase of TiO2, whereas anatase and brookite are both metastable states [194,195].…”

Section: Characterization Of Pt/tio2/pt Exponential Selectorsmentioning

confidence: 99%

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Chee

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Short-term plasticity plays a crucial role in the hardware implementation of artificial neural networks (ANN) as it enables temporal information processing capability. However, the short-term plasticity feature is rather challenging to reproduce from a single non-volatile resistive random-access memory (RRAM) component due to its requirement for a certain degree of volatility. Nonetheless, if the selector in one selector-one RRAM (1S1R) integration demonstrates short-term plasticity, it enables the 1S1R device to perform temporal information processing even in the absence of short-term plasticity in RRAM.In this thesis, an exponential selector of Pt/TiO2/Pt structure is introduced to demonstrate the short-term plasticity feature, which is shown to be dependent on the electrodeoxide interface through plasma treatment, and a microscopic model is proposed to explain the observed feature. Thereafter, the short-term plasticity and nonlinearity of the exponential selector are tuned by modulating the oxygen vacancy defects in the TiO2 layer. As the concentration of oxygen vacancy defects increases, the dominant conduction mechanism of the exponential selector transitions from Schottky emission to Poole-Frenkel emission.Additionally, a 1S1R synaptic device is developed based on the Pt/TiO2/Pt exponential selector and a Pt/HfO2/Ti RRAM structure. The Pt/TiO2/Pt selector with short-term plasticity is integrated not only to suppress the sneak current but also to enable the temporal information processing feature, while the Pt/HfO2/Ti RRAM structure enables the long-term memory capability of the 1S1R synapse. Frequency-dependent multilevel switching is experimentally demonstrated in the 1S1R synaptic device, exhibiting the capability of temporal information processing. Furthermore, a 2x2 crossbar array based on the developed 1S1R device is characterised under the worst-case scenario, demonstrating the potential of using this 1S1R synaptic device in the hardware implementation of ANN.

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Section: Characterization Of Pt/tio2/pt Exponential Selectorsmentioning

confidence: 99%

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Chee

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Synthesis and Characterization of TiO₂ Thin Film Based on Iron Sand of Lampung Province - Indonesia

Marjunus

Febriyanti

Stevani

et al. 2021

J. Phys.: Conf. Ser.

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This study aims to make a thin layer of TiO2 based on ilmenite stored in iron sand of Lampung Province, Indonesia. The TiO2 powder, which was used to make the thin layer, was obtained from the extraction of iron sand using the leaching method with a purity of 60,7%. The preparation of TiO2 thin layers was carried out by the Chemical Bath Deposition (CBD) method with immersion time variations of 2, 3, 4, and 5 hours for samples A, B, C, and D respectively. Afterward, the samples were calcined at 500°C for 4 hours. The characterizations involved X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), X-Ray Fluorescence (XRF), and four-point probe to measure the resistivity of the film. The XRD results in samples A (immersion time 2 hours) and D (immersion time 5 hours) show that the amorphous phase still dominates even though the diffraction peaks indicate that the presence of crystals has started to grow at several angles of scattering. The identification results of the phase presence show that the thin layer of TiO2 at sample D is the brookite phase. The results of characterization using SEM show that the surface of the TiO2 thin layer forms a porous structure. The average thickness of the thin film at sample B based on SEM analysis is 1.9 μm. The electrical resistivity increased with an increasing immersion time.

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Characterization of TiO2 Thin Film Deposited by RF Sputtering Method

Cited by 2 publications

References 20 publications

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Synthesis and Characterization of TiO₂ Thin Film Based on Iron Sand of Lampung Province - Indonesia

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Characterization of TiO2 Thin Film Deposited by RF Sputtering Method

Cited by 2 publications

References 20 publications

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Frequency-dependent redox-based 1S1R synapse with a short-term plasticity TIO2-based exponential selector

Synthesis and Characterization of TiO2 Thin Film Based on Iron Sand of Lampung Province - Indonesia

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Synthesis and Characterization of TiO₂ Thin Film Based on Iron Sand of Lampung Province - Indonesia