Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge

Das, Debajyoti; Jana, Madhusudan; Barua, A. K.

doi:10.1016/s0927-0248(00)00035-0

Cited by 48 publications

(33 citation statements)

References 17 publications

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“…2: the trend indicates that when CO 2 flow increases, I CRS decreases while E 04 increases, resulting in a reduction of σ dark . Such a trend has been previously observed for silicon oxide films and explained in terms of the effects of oxygen incorporation into silicon network [4,5]. Additional information on the properties of μc-SiO x :H can be found in ref.…”

Section: Resultssupporting

confidence: 71%

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Smirnov

Böttler

Lambertz

et al. 2010

Phys. Status Solidi (c)

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N‐type hydrogenated microcrystalline silicon oxide (μc‐SiOx:H) layers were used as window layers in n‐side illuminated microcrystalline silicon n–i–p solar cells. Optical, electrical and structural properties of μc‐SiOx:H films were investigated by Photothermal Deflection Spectroscopy, conductivity and Raman scattering measurements. μc‐SiOx:H layers were prepared over a range of carbon dioxide (CO2) flow and film thickness, and the effects on the solar cell performance were investigated. By optimising the μc‐SiOx:H window layer properties, an improved short‐circuit current density of 23.4 mA/cm2 is achieved, leading to an efficiency of 8.0% for 1μm thick absorber layer and Ag back contact. The correlation between cell performance and μc‐SiOx:H layer properties is discussed. The results are compared to the performance of solar cells prepared with alternative optimised window layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 71%

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Smirnov

Böttler

Lambertz

et al. 2010

Phys. Status Solidi (c)

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“…It has been found that µc-SiO X :H consists of µc-Si:H crystallites embedded in a-SiO X :H matrix [1,3]. Therefore the crystalline volume fraction I C which is in our case determined by the CO 2 flow (Fig 1.…”

Section: Discussionmentioning

confidence: 65%

“…The amount of oxygen incorporated into SiO X :H film is a key parameter that determines structural, optical and electrical properties of the material [1][2][3][4]. In the present study the flow of CO 2 supplied in the reactor is varied in order to change the oxygen content in the deposited material [3].…”

Section: Resultsmentioning

confidence: 99%

“…In particular hydrogenated silicon oxide in its amorphous (a-SiO X :H) and microcrystalline (µc-SiO X :H) forms, deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD), is of great interest for thin film photovoltaics as e.g. an intermediate reflector due to its combination of a tunable refractive index, tunable optical band gap and susceptibility to doping [1][2][3]. The results of the structural investigations of µc-SiO X :H indicate the presence of µc-Si:H and a-SiO X :H phases in the material whereas no indications of c-SiO phase have been observed [1,3].…”

mentioning

confidence: 99%

“…an intermediate reflector due to its combination of a tunable refractive index, tunable optical band gap and susceptibility to doping [1][2][3]. The results of the structural investigations of µc-SiO X :H indicate the presence of µc-Si:H and a-SiO X :H phases in the material whereas no indications of c-SiO phase have been observed [1,3]. The optical and electronic properties of such heterogeneous material will be determined by the properties of each phase and their relationship in the bulk, which provides a potential for the material engineering.…”

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confidence: 99%

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Defects and structure of µc‐SiO_x:H deposited by PECVD

Xiao

Astakhov

Carius

et al. 2010

Phys. Status Solidi (c)

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Electronic transport and paramagnetic defects detected by Electron Spin Resonance (ESR) in both intrinsic and <n>‐type silicon oxide prepared by PECVD were investigated. The structure and alloy composition of the material were varied all the way from microcrystalline silicon (µc‐Si:H) to amorphous silicon oxide (a‐SiOX:H). The transition‐phase‐mixture material is called “microcrystalline silicon oxide” (µc‐SiOX:H). In undoped samples we find a strong reduction of the dark conductivity from 10‐3to 10‐12 S/cm and an increase of the spin density from1017 to 3×1019 cm‐3 as the crystallinity decreases from 80% to 0%. The variation of the dark conductivity in phosphorous doped samples was even higher from 101 to 10‐12 S/cm. ESR spectra of intrinsic material consist of a single featureless line with g‐values in the range of 2.0043…2.005 depending on the structure and alloying. The spectra of <n>‐type material exhibit a broader range of g‐values of 1.998…2.0043 due to strong variations of the Fermi level over the entire crystallinity range. The results are discussed within the frame of current understanding of µc‐SiOX:H as a phase mixture of µc‐Si:H crystallites embedded in a‐SiOX:H matrix (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photovoltaics literature survey (No. 4)

Keevers

2000

Prog. Photovolt: Res. Appl.

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In order to help keep readers up‐to‐date in the field each issue of Progress in Photovoltaics will contain a list of recently published journal articles most relevant to its aims and scope. This list is drawn primarily from recent issues of IEEE Transactions on Electron Devices, Journal of Applied Physics, Progress in Photovoltaics, Solar Energy and Solar Energy Materials and Solar Cells, with additional journals surveyed if space permits. To assist the reader, the list is separated into broad categories, but please note these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. Copyright © 2000 John Wiley & Sons, Ltd.

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Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge

Cited by 48 publications

References 17 publications

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Defects and structure of µc‐SiO_x:H deposited by PECVD

Photovoltaics literature survey (No. 4)

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Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge

Cited by 48 publications

References 17 publications

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiOx:H) n‐layer

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiOx:H) n‐layer

Defects and structure of µc‐SiOx:H deposited by PECVD

Photovoltaics literature survey (No. 4)

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Product

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Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Defects and structure of µc‐SiO_x:H deposited by PECVD