Characterization of various FinFET based 6T SRAM cell configurations in light of radiation effect

Limachia, Mitesh; Kothari, Nikhil

doi:10.1007/s12046-020-1269-8

Cited by 11 publications

(2 citation statements)

References 4 publications

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“…6-Transistor (6T) SRAM Cell: Limachia and Kothari's 2020 innovation involved a 6T SRAM cell comprising two cross-coupled inverters and a pair of access FinFET transistors. This cell, known for its compact footprint, stores each bit on four FinFET transistors (XM3, XM4, XM5, and XM6) and utilizes two access FinFETs (XM1, XM2) connected to bitlines BL and BLBar [9].…”

Section: Advanced Finfet-based Sram Cell Designsmentioning

confidence: 99%

Advancements And Applications of Finfet Technology in Modern Semiconductor Engineering

2024

HSET

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This comprehensive study presents an in-depth analysis of Fin Field-Effect Transistor (FinFET) technology, a significant innovation in semiconductor technology, focusing on its structural attributes, applications, and future prospects. FinFETs, characterized by their distinctive fin-like channels, are pivotal in overcoming the limitations of traditional MOSFETs, particularly in the context of device miniaturization. The paper begins by exploring the basic theory and structural characteristics of FinFETs, emphasizing their enhanced control over short channel effects and reduced leakage currents in scaled-down devices. Attention is then directed towards the integration of FinFET technology in Static Random-Access Memory (SRAM), detailing how FinFETs contribute to improved stability and efficiency in memory storage. Another crucial application discussed is in the biomedical field, where FinFETs have facilitated the development of advanced instrumentation amplifiers and sensitive sensors, marking a leap in medical electronics. The paper concludes by addressing the challenges encountered by FinFETs as fabrication approaches the 5-7nm scale, including their physical and structural limitations. It also highlights ongoing research in structural modifications and material innovations like Gate-All-Around FETs and alternative materials, underscoring the continued evolution and relevance of FinFET technology in the ever-advancing semiconductor industry.

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Section: Advanced Finfet-based Sram Cell Designsmentioning

confidence: 99%

Advancements And Applications of Finfet Technology in Modern Semiconductor Engineering

2024

HSET

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“…• FinFET-6T SRAM cell: The 6T (6Transistor) SRAM (Limachia & Kothari, 2020) includes two cross-coupled (2-CC) inverters and dual access FinFET transistors. The 2-CC inverters consist of 4 transistors named as (XM3, XM4, XM5 and XM6).…”

Section: Finfet Based Sram Cellsmentioning

confidence: 99%

A Review on SRAM Memory Design Using FinFET Technology

Lakshmi¹,

Kamaraju²

2022

International Journal of System Dynamics Applications

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An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to offer better transistor circuit design and to compensate the necessity of superior storage system (SS). As gate loses control over the channel, CMOS devices faces some major issues like increase in manufacturing cost, less reliability and yield, increase of ON current, short channel effects (SCEs), increase in leakage currents etc. However, it is necessary for the memory to have less power dissipation, short access time and low leakage current. The traditional design of SRAM (Static RAM) using CMOS technology represents severe performance degradation due to its higher power dissipation and leakage current. Thus, a Nano-scaled device named FinFET is introduced for designing SRAM since it has three dimensional design of the gate. FinFET has been used to improve the overall performance and has been chosen as a transistor of choice because it is not affected by SCEs. In this work, we have reviewed various FinFET based SRAM cells, performance metrics and the comparison over different technologies.

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