Characterization of vertical Si nanowire p-n diodes fabricated by metal-assisted etching and AAO templates

Abstract

Articles you may be interested inInfluence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching Fabrication of vertically aligned Si nanowires on Si (100) substrates utilizing metal-assisted etching J. Vac. Sci. Technol. A 28, 735 (2010); 10.1116/1.3336572Integrated silicon nanowire diodes and the effects of gold doping from the growth catalyst Vertical Si nanowire p-n diodes were fabricated utilizing both anodic aluminum oxide (AAO) templates and metal-assisted etching. AAO templates with different diameters were fabricated on a p(2.5 lm)-n junction substrate using a two-step anodization and pore widening process. The average diameters of the AAO templates were 36.3, 57.4, and 78.1 nm. Vertical Si nanowire p-n diodes were then fabricated by metal-assisted etching, with average diameters of 37.4, 53.3, and 62.8 nm. The lengths of the vertical Si nanowires were controlled by varying the etching times. For the fully etched (3 lm) Si nanowire, the p-n diodes with smaller diameters yielded higher current densities than those with larger diameters, due to mobility enhancement. However, such dependency was not observed for the partially etched (500 nm) Si nanowire p-n diodes. It was concluded that the recombination current is too dominant in the depletion region to improve mobility in one-dimensional transport.

Fabrication and Doping Methods for Silicon Nano‐ and Micropillar Arrays for Solar‐Cell Applications: A Review

“…For a more detailed discussion about the possible mechanism for MACE, see the article by Geyer et al [ 46 ] Typically, the process results in the formation of silicon nanopillars with diameters from <10 nm up to a few hundred nanometers, and with heights depending on the etching time, ranging from a few micrometers up to 20 µm. [ 2,[47][48][49] Peng et al investigated the etching direction of both gold and silver particles, and concluded that this direction is highly uniform, does not depend on the dopant type and level of the substrate, and preferentially occurs along the (100) orientation of crystalline silicon ( Figure 6 ). [ 50 ] Instead of electroless deposition of metal particles, it is also possible to deposit a thin metal fi lm, which is patterned or annealed to create nanoparticles.…”

Cr–Si Schottky Nano-Diodes Utilizing Anodic Aluminum Oxide Templates

“…[10][11][12][13][14] Among these materials, anodic aluminum oxide (AAO) template has great advantages due to the low cost and easy process. [10][11][12] Especially, AAO templates provide good opportunities to fabricate high-density arrays of sizecontrolled nanodots on a Si substrate by depositing the materials on a through-hole membrane. 10 In this study, we fabricated Cr nanodot Schottky diodes by depositing Cr through AAO templates.…”

Fabrication and doping of silicon micropillar arrays for solar light harvesting

“…For a more detailed discussion about the possible mechanism for MACE, see the article by Geyer et al [46] Typically, the process results in the formation of silicon nanopillars with diameters from <10 nm up to a few hundred nm, and with heights depending on the etching time, ranging from a few µm up to 20 µm. [2,[47][48][49] Peng et al investigated the etching direction of both gold and silver particles, and concluded that this direction is highly uniform, does not depend on the dopant type and level of the substrate, and preferentially occurs along the (100) orientation of crystalline silicon (Figure 2.6). [50] Instead of electroless deposition of metal particles, it is also possible to deposit a thin metal film, which is patterned or annealed to create…”