Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

Abstract

Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64 nm for InN films grown at N2 : Ar ratio of 100 : 0, 75 : 25, and 50 : 50, respectively. The Raman spectra indicates well defined peaks at 578, 583, and 583 cm−1, which correspond to the A1(LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50 N2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E1(TO)] phonon mode of the InN at 479 cm−1just for film that were deposited at 50 : 50 N2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N2 : Ar gas mixture of 50 : 50.

Optical properties of photo-electrochemical etching of anisotropic silicon (110)

“…Besides that, the increases of the PL intensity are attributed to the larger surface area as compared to unetched Si samples. [14]. By increasing the etching time, the Raman peak position slightly shifted to toward lower frequency.…”

Controlling refractive index in AlN films by texture and crystallinity manipulation

“…The deposition of AlN on c-sapphire at low temperature can promote the growth of other planes than (002) due to a twinning mechanism resulting from reduced internal electrostatic field that favors the growth with (101) planes parallel to the surface. In addition, the size of crystallites was calculated from the full width at half maximum of the (002) diffraction peak by using the Scherrer's formula [36][37]. Fig ( 4) shows the size of crystallites increases with N2% on both substrates and exhibits a similar trend to the (002) texture coefficient calculated by equation (3.2).…”

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid

“…4 InN have large electron transport properties with low e®ective mass and contains a surface accumulation layer that sorts InN as an important material used for manufacturing of high-frequency optoelectronic devices. 5 The low e®ective mass for electrons o®ers high mobility to the charge carriers and high saturation velocity. It observed that InN at room temperature o®ers high peak drift velocity.…”