Charge build-up and its reduction in plasma cleaning process

Arita, Kiyoshi; Noda, Kei; Asano, Tanemasa

doi:10.1109/iemte.1998.723065

Cited by 6 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, they may cause damages to the chip by ion bombardments [6], or ultrasonic vibration. Furthermore, plasma irradiation may cause charge build-up which makes breakdown of the semiconductor stacked for 3D integration [7]. In ultrasonic bonding, it is difficult to align chips with high degree of accuracy due to the ultrasonic vibration.…”

Section: Introductionmentioning

confidence: 99%

Low temperature Au-Au bonding with VUV/O<inf>3</inf> treatment

Okada

Nimura

Unami

et al. 2012

2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International

View full text Add to dashboard Cite

This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants of Au surfaces without damages. The Au surfaces after the VUV/O 3 treatment were analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results show that carbon-based contaminants were dramatically decreased and that there were no serious damages in Au surfaces by the VUV/O 3 treatment. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average of shear strength of about 80 MPa per unit area was obtained. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding.

show abstract

Section: Introductionmentioning

confidence: 99%

Low temperature Au-Au bonding with VUV/O<inf>3</inf> treatment

Okada

Nimura

Unami

et al. 2012

2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International

View full text Add to dashboard Cite

show abstract

“…18) However, some problems such as temperature increase and damage due to ion bombardment can occur during the treatment, 19) and charge build-up by plasma treatment causes breakdown of the semiconductor stacked for 3D integration. 20) Vacuum ultraviolet (VUV) treatment, in contrast, does not cause such problems. In our previous work, VUV treatment was shown to be effective for SnCu-Au bonding processes.…”

Section: Introductionmentioning

confidence: 99%

Effects of Excimer Irradiation Treatment on Thermocompression Au–Au Bonding

Unami

Sakuma

Mizuno

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We studied the feasibility of using vacuum ultraviolet (VUV) treatment as a surface improvement technique with Au–Au flip-chip bonding. For fine-pitch electrical interconnections in three-dimensional (3D) stack applications, robust and reliable bonding is desirable; in this case, surface modification treatment is needed before the bonding process. A VUV surface treatment was used to remove organic contaminants. Samples of electroplated Au pads were examined by X-ray photoelectron spectroscopy (XPS) to evaluate the chemical composition of the Au surfaces. The XPS results revealed that the carbon-based contaminants on the surface were removed by the VUV treatment. The shear strength of the bonded sample was also improved. The average shear strength of a bump with VUV treatment is 1.6 times larger than that of a bump without VUV treatment. Cross-sectional scanning electron microscopy (SEM) images of the bonded samples confirmed the absence of voids and cracks. The results show that VUV treatment has clear effects on Au–Au flip-chip bonding.

show abstract