Charge Buildup in Magnetized Process Plasma

Namura, Takashi; Okada, H.; Naitoh, Yasushi; Todokoro, Yoshihiro; Inoue, M.

doi:10.1143/jjap.30.1576

Cited by 22 publications

(3 citation statements)

References 1 publication

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“…In mode 2, a nonuniform plasma density inherent to some types of reactor configurations such as magnetically enhanced RIE (MERIE) is a dominant factor. 36,186,187) In this mode, the current through the wafer to the gate insulator is increased to cause a large gate leakage. In mode 3, the so-called antenna effect, which is inherent to plasma processing, plays a significant role.…”

Section: Typical Damage During Harc Etching and Removal Of Damaged Layermentioning

confidence: 99%

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Abe¹,

Yoneda

Fujiwara

2008

jjap

285

163

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Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and ashing/plasma cleaning are the currently used booster technologies for manufacturing all silicon devices based on the scaling law. The needs-driven conversion from the wet etching process to the plasma/dry etching process is reviewed. The progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices. The critical applications of RIE, isotropic etching, and plasma ashing/cleaning to form precisely controlled profiles of high-aspect-ratio contacts (HARC), gate stacks, and shallow trench isolation (STI) in the front end of line (FEOL), and also to form precise via holes and trenches used in reliable Cu/low-k (low-dielectric-constant material) interconnects in the back end of line (BEOL) are described in detail. Some critical issues inherent to RIE processing, such as the RIE-lag effect, the notch phenomenon, and plasma-induced damage including charge-up damage are described. The basic reaction mechanisms of RIE and isotropic etching are discussed. Also, a procedure for designing the etching process, which is strongly dependent on the plasma reactor configuration, is proposed. For the more precise critical dimension (CD) control of the gate pattern for leading-edge devices, the advanced process control (APC) system is shown to be effective.

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Section: Typical Damage During Harc Etching and Removal Of Damaged Layermentioning

confidence: 99%

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Abe¹,

Yoneda

Fujiwara

2008

jjap

285

163

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“…They produce higher ion densities at lower energy. A better knowledge of oxide damage produced by these etchers is needed [9]- [13]. In this paper, thin oxide stressing by a MERIE etcher and by an RIE etcher was investigated to understand how magnetic field affects the charging to devices.…”

Section: Introductionmentioning

confidence: 99%

Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher

Shin

Noguchi

Qian

et al. 1993

IEEE Electron Device Lett.

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Abstrac-The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MEME) was investigated and compared with that in a reactive ion etcher charging current were determined bv evaluating auasi-static CV in edge length. Aluminum etching with patterned photoresist on top of aluminum layer was done both in a RIE a 13-56-MHz RF generator* Reactive ion etching was (NE). The polarity as well as the magnitude of the oxide etcher and a etcher* Both systems were powered curves for MOS capacitors. In a MERIE etcie; with a static done in a Darallel d a t e etcher at 250 W. Photoresist was magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging stripped b; wet drocess before testing. There was no temperature cycling after aluminum etching. ~~~~~l l a magnetic field in a MERIE etcher rotates to obtain better the wafer in a MEME

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“…Recently, we have proposed an equivalent circuit model for wafer charging in a barrel etcher, °a magnetron reactive ion etching (MRIE) etcher, and an electron cyclotron resonance (ECR) etcher. 8 On the other hand, the chargin damage into the oxide film depends on the device structure and the film quality. Tsunokuni et al found the effect of the area ratio between thin and thick oxide region in an isolated gate pattern.…”

Section: Introductionmentioning

confidence: 99%

<title>Wafer charging in different types of plasma etchers</title>

et al. 1992

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Wafer charging in barrel etchers, reactive ion etching (RIE) etchers, magnetron RIE (MRIE) etchers and electron cyclotron resonance (ECR) etchers are characterized. The charging voltages were measured by using electrically programmable non-volatile memories. The charging profile for the barrel etchers and the RIE etcher depends critically on the electrode arrangements and wafer locations, while that in the MRIE etchers and the ECR etchers depends on the structure of the magnetic field. Even in the case of a non-divergent magnetic field ECR etcher, wafer charging is built-up when an RF bias is applied to the wafer stage.By analyzing these results, two charging mechanisms are distinguished. One is the plasma nonuniformity around the wafer, which depends on the RF electrode and the wafer location. The other is the anisotropy of the magnetized plasma, which depends on the structure of the magnetic field. Some of the charging profiles due to the former effect is reproduced by using an equivalent circuit model. It is found from the model that even in the uniform density plasma, wafer charging is induced by the RF current which causes a plasma potential variation across the wafer surface.

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Charge Buildup in Magnetized Process Plasma

Cited by 22 publications

References 1 publication

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher

<title>Wafer charging in different types of plasma etchers</title>

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