Growth and electrical characteristics of thin silicon~ dioxide using the rapid thermal oxidation (RTO) process have been studied for planar and trench capacitors. Growth of silicon dioxide follows the linear-parabolic model. The activation energies of the linear rate constant B/A and the parabolic rate constant B are found to be 1.98 and 1.42 eV, respectively.Good electrical characteristics can be achieved by increasing the oxidation temperature from 1000 ~ to 1150~ For the trench capacitors oxidized at 1150~ it is found that oxide breakdown occurs dominantly at the fields 10 -12 mV/cm, the leakage current density is 3 • 10 -11A/cm 2 and the interface-state density is 3 x 10 TM cm -~ eV -1. The RTO process is proved to be a promising technique for the fabrication of trench capacitors. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-30 to IP Vol. 135,No. 1

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Wafer charging in barrel etchers, reactive ion etching (RIE) etchers, magnetron RIE (MRIE) etchers and electron cyclotron resonance (ECR) etchers are characterized. The charging voltages were measured by using electrically programmable non-volatile memories. The charging profile for the barrel etchers and the RIE etcher depends critically on the electrode arrangements and wafer locations, while that in the MRIE etchers and the ECR etchers depends on the structure of the magnetic field. Even in the case of a non-divergent magnetic field ECR etcher, wafer charging is built-up when an RF bias is applied to the wafer stage.By analyzing these results, two charging mechanisms are distinguished. One is the plasma nonuniformity around the wafer, which depends on the RF electrode and the wafer location. The other is the anisotropy of the magnetized plasma, which depends on the structure of the magnetic field. Some of the charging profiles due to the former effect is reproduced by using an equivalent circuit model. It is found from the model that even in the uniform density plasma, wafer charging is induced by the RF current which causes a plasma potential variation across the wafer surface.

of these new materials have necessitated the evaluation of new chemicals and processing methods. The control of the Dissolved Oxygen (DO) concentration to suppress Cu corrosion is well established in BEOL processing and likewise in order to achieve a hydrophobic surface after pre-epi cleaning in FEOL surface preparation [2].

334ChemInform Abstract Planar and trench MOS capacitors are fabricated using RTO and their electrical characteristics as well as the SiO2 growth characteristics are determined. It is observed that SiO2 growth follows the linear-parabolic model. Good electrical characteristics can be achieved by increasing the oxidation temp. from 1000 rc C to 1150 rc C. For trench capacitors oxidized at 1150 rc C, oxide breakdown occurs dominantly at 10-12 mV/cm, the leakage current density is 3•10-11 A/cm2, and the interface-state density is 3•1010 cm-2 eV-1 and increases with decreasing oxidation temperature. The RTO process is shown to be a promising technique for the fabrication of trench capacitors.