Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

Abstract

Growth and electrical characteristics of thin silicon~ dioxide using the rapid thermal oxidation (RTO) process have been studied for planar and trench capacitors. Growth of silicon dioxide follows the linear-parabolic model. The activation energies of the linear rate constant B/A and the parabolic rate constant B are found to be 1.98 and 1.42 eV, respectively.Good electrical characteristics can be achieved by increasing the oxidation temperature from 1000 ~ to 1150~ For the trench capacitors oxidized at 1150~ it is found that oxide breakdown occurs dominantly at the fields 10 -12 mV/cm, the leakage current density is 3 • 10 -11A/cm 2 and the interface-state density is 3 x 10 TM cm -~ eV -1. The RTO process is proved to be a promising technique for the fabrication of trench capacitors. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-30 to IP Vol. 135,No. 1

Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation

“…The surface roughness of the poly-Si layer should cause these oxidation rate differences, especially by FO, which leads to inferior electrical characteristics. On the other hand, oxide layers with uniform.thicknesses are grown by RTO over corrugated structures, as previously observed by Miyai et al (19). Therefore, these structural effects on oxidation rate should result in higher resistance to breakdown and higher reliability of RTO oxide layers.…”

“…Therefore, formation of highly reliable thin oxide layers has become the key technology in realizing the coming submicron VLSI's. Many papers have been published regarding the high quality thin oxide layers on silicon substrates (2)(3)(4)(5)19).…”

“…Rapid thermal process gathered attention recently because of its precise controllability of temperature and time (16,(19)(20)(21). This paper aims to demonstrate the formation of highly reliable poly-Si oxide by rapid thermal oxidation (RTO).…”

“…Miyai et al(19) reported TDDB characteristics of RTO and FO oxides grown on trench capacitors and found that RTO oxides are superior to FO oxides. Their results indicate that RTO should grow oxide layers with even thicknesses over corrugated surfaces.…”