Growth and electrical characteristics of thin silicon~ dioxide using the rapid thermal oxidation (RTO) process have been studied for planar and trench capacitors. Growth of silicon dioxide follows the linear-parabolic model. The activation energies of the linear rate constant B/A and the parabolic rate constant B are found to be 1.98 and 1.42 eV, respectively.Good electrical characteristics can be achieved by increasing the oxidation temperature from 1000 ~ to 1150~ For the trench capacitors oxidized at 1150~ it is found that oxide breakdown occurs dominantly at the fields 10 -12 mV/cm, the leakage current density is 3 • 10 -11A/cm 2 and the interface-state density is 3 x 10 TM cm -~ eV -1. The RTO process is proved to be a promising technique for the fabrication of trench capacitors. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-30 to IP Vol. 135,No. 1

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334ChemInform Abstract Planar and trench MOS capacitors are fabricated using RTO and their electrical characteristics as well as the SiO2 growth characteristics are determined. It is observed that SiO2 growth follows the linear-parabolic model. Good electrical characteristics can be achieved by increasing the oxidation temp. from 1000 rc C to 1150 rc C. For trench capacitors oxidized at 1150 rc C, oxide breakdown occurs dominantly at 10-12 mV/cm, the leakage current density is 3•10-11 A/cm2, and the interface-state density is 3•1010 cm-2 eV-1 and increases with decreasing oxidation temperature. The RTO process is shown to be a promising technique for the fabrication of trench capacitors.