Charge carrier mobilities in dark-conductive organic thin films determined by the surface acoustoelectric travelling wave (SAW) technique

Karl, N.; Kraft, K.-H.; Marktanner, J.

doi:10.1016/s0379-6779(99)00234-9

Cited by 13 publications

(3 citation statements)

References 9 publications

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“…Recently, the carrier mobility of organic semiconductors has been measured by TOF, SCLC, FET characterizations, and Hall effect measurements . Early experimental methods to determine carrier mobilities by electric transport methods include the equilibrium charge carrier extraction method, drift current methods under limited range conditions, the conductivity/concentration (σ/ n ) method, the surface acoustic‐electric traveling wave method, etc . These methods have been less employed than FET characterizations, which directly connect the mobility value to the functional circuits.…”

Section: Ideal and Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Section: Ideal and Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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“…Charge carrier mobility is the key characteristic of organic semiconductors. Experimentally, it can be extracted from time-of-flight measurements 1,2 , currentvoltage characteristics in a diode 3,4 or field effect transistor 5,6 , pulse-radiolysis time-resolved microwave conductivity measurements 7 , or other techniques [8][9][10][11][12][13][14][15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

Finite-size scaling of charge carrier mobility in disordered organic semiconductors

2016

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Simulations of charge transport in amorphous semiconductors are often performed in microscopically sized systems. As a result, charge carrier mobilities become system-size dependent. We propose a simple method for extrapolating a macroscopic, nondispersive mobility from the system-size dependence of a microscopic one. The method is validated against a temperature-based extrapolation [Phys. Rev. B 82, 193202 (2010)]. In addition, we provide an analytic estimate of system sizes required to perform nondispersive charge transport simulations in systems with finite charge carrier density, derived from a truncated Gaussian distribution. This estimate is not limited to lattice models or specific rate expressions.

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“…[40][41][42] It has been used to characterize the drift mobility of semiconductors, 43 electromagnetic properties of two-dimensional electron system (2DES) on GaAs/Al x Ga 1-x As heterojunctions, 44,45 acoustoelectric currents in magnetic thin films, 46 superconducting properties of thin films, 47 and charge carrier mobility in organic thin films. 48 We have also reported several results obtained using this measurement method, for example, dielectric properties of C 60 and carbon nanotube films, 49,50 excitation states of antimony impurity in silicon, 51 ionization energies of nitrogen impurity in 4H-SiC crystal 52 in our previous works. By increasing coupling area of the sample with external electric field, we found that this method is very effective for characterizing ultra-thin sample.…”

Section: Introductionmentioning

confidence: 91%

Coupling behaviors of graphene/SiO2/Si structure with external electric field

2017

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A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

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Charge carrier mobilities in dark-conductive organic thin films determined by the surface acoustoelectric travelling wave (SAW) technique

Cited by 13 publications

References 9 publications

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Finite-size scaling of charge carrier mobility in disordered organic semiconductors

Coupling behaviors of graphene/SiO2/Si structure with external electric field

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