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Starting from the question, what fast electronic transport is based on, and why organic materials in general are more problematic in this respect than typical inorganic ones, methods are introduced that allow to measure the principal material property charge carrier mobility. Some representative experimental results are presented which prove that mobilities around 1–10 cm2/V s can be achieved at room temperature, and more than 100 cm2/V s at low temperature—but only if chemical purity and structural order can be brought to a very high level.

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A new technology for thin-film MEMS encapsulation with a monocrystalline silicon membrane is presented. The thickness of the membrane, used here, is 36 µm. It is produced on a dedicated wafer using a further development of the "Advanced Porous Silicon Membrane (APSM)" Process. The membrane wafer is attached to a MEMS wafer by glass-frit bonding. Before and during bonding the membrane is mechanically connected to its substrate by vertical anchors. Finally, the substrate is detached by cracking these anchors. The new encapsulation technology enables a very low sensor height by a hermetically sealed monocrystalline MEMS-Cap while using standard wafer bonding equipment. Hence, a cost-efficient all-purpose thin-film encapsulation is presented. We demonstrate the new encapsulation technology by a capped pressure sensor. KEYWORDSThin-film encapsulation, wafer level package, pressure sensor, monocrystalline, wafer bonding