Charge Pumping Technique to Measure Polarization Switching Charges of FeFETs

Nam, Kab-Jin; Park, Jungmin; Choi, Byoungdeog; Kwon, Kee-Won

doi:10.1109/ted.2022.3188951

Cited by 5 publications

(5 citation statements)

References 22 publications

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“…The P - V characteristics are measured by applying a triangular pulse sequence to the gate of the FeFET at 2.5 kHz as shown by the black solid line in Figure 10 a, and short the Source, Drain, and substrate to the ground [ 28 , 34 , 35 ]. The maximum values of the triangular pulse sequence are V P = 4.5 V and V N = −4.5 V, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The polarization measurement is actually a measurement of charge in the capacitor given by Equation (1) [ 34 , 36 ].

where Q is the total charge in the ferroelectric, A is the capacitor area, and P is the polarization.…”

Section: Resultsmentioning

confidence: 99%

“…

where Q is the total charge in the ferroelectric, A is the capacitor area, and P is the polarization. Polarization can thus be obtained by the integration of the measured switching current ( I ) with respect to time, as shown in Equation (2) [ 34 , 36 ].

…”

Section: Resultsmentioning

confidence: 99%

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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

Wang

et al. 2023

Nanomaterials

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A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. The effects of charge trapping have been studied by changing the parameters of the applied program and erase pulses in a test sequence. With increasing the pulse amplitude and pulse width, the MW increases first and then decreases, a result attributed to the competition between charge trapping (CT) and ferroelectric switching (FS). This interaction between CT and FS is analyzed in detail using a single-pulse technique. In addition, the experimental data show that the conductance modulation characteristics are affected by the CT in the analog synaptic behavior of the FeFET. Finally, a theoretical investigation is performed in Sentaurus TCAD, providing a plausible explanation of the CT effect on the memory characteristics of the FeFET. This work is helpful to the study of the endurance fatigue process caused by the CT effect and to optimizing the analog synaptic behavior of the FeFET.

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Section: Resultsmentioning

confidence: 99%

“…The polarization measurement is actually a measurement of charge in the capacitor given by Equation (1) [ 34 , 36 ].

where Q is the total charge in the ferroelectric, A is the capacitor area, and P is the polarization.…”

Section: Resultsmentioning

confidence: 99%

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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

Wang

et al. 2023

Nanomaterials

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“…The errors of the measured frequency and duty cycle increase with the clock frequency due to the simulator limitations, which decreases the internal calculations accuracy with the increasing frequency. Although the usual frequency range of circuits under SPICE simulation ranges from Direct Current (DC) up to 100 MHz [26], [27], [28], [29], the novel proposed clock frequency measurement model proves able to achieve remarkable results within an extremely large range of frequencies (10kHz-1GHz).…”

Section: Resultsmentioning

confidence: 99%

“…The proposed concept is based on the ideal capacitor behavior (CST in Fig. 5) as specified [27], [28], [29], [30]:…”

Section: Figure 5 Spice Concept Of the Register Modulementioning

confidence: 99%

A Novel Frequency Measurement Methodology for Clock Synchronization in SPICE-Based Simulators

Guran,

Florescu,

Perisoara

2023

IEEE Access

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Nowadays, there is an increasing demand for complex behavioral models on the market, as simulation has become the main verification approach used for both analog and digital functionalities. One of the most popular mixed-signal simulators nowadays is Simulation Program for Integrated Circuits Emphasis (SPICE). Over the last decade, the digital part in circuits has become predominant, but this poses big challenges when developing SPICE simulation models, as the circuits are synchronized upon internal or external clock signals, where the frequency accuracy is mandatory. The existing SPICE based simulators have built-in options to measure the signal frequency and duty cycle, but only after the simulation has completed, and in this way the frequency information can not be used during the simulation to synchronize the clock signals. There is a lot of research on frequency measurement techniques in the literature, but this topic has not been translated and covered in SPICE until now. Implementing the physical frequency measurement circuits proposed previously in the literature would increase the models' complexity and the simulation time, without benefitting the final user. For this reason, in this article, a novel frequency measurement methodology for clock synchronization in SPICE based simulators is proposed, which aims to provide accurate measured frequency and duty cycle values for the digital clock signals with a fast simulation time. The performance evaluation of this methodology is done using OrCAD Capture, which is the most popular SPICE-based simulation environment.

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Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

Djezzar

2023

Journal of Applied Physics

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This paper reviews the evolution of the charge pumping (CP) technique and its applications from the micrometer-scale to the atomic-scale device era. We describe the more significant milestones of the CP technique (CPT) over the past couple of decades, giving insight into its potentialities. We start with the most popular one “traditional or conventional CP” and follow up with its different extensions in various fields like transistor reliability and radiation damage characterizations in devices fabricated with old and new semiconductor and dielectric materials. We show its easy adaptability for transistors with specific geometries. Advantages, weaknesses, as well as future tendencies of CPT and its variants, are also discussed.

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Charge Pumping Technique to Measure Polarization Switching Charges of FeFETs

Abstract: Kab-Jin Nam received the M.S. degree in chemical engineering from POSTECH, Pohang, Korea, in 1995. He is currently pursuing the Ph.D. degree in Department of Electrical and Computer Engineering,

Cited by 5 publications

References 22 publications

Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

A Novel Frequency Measurement Methodology for Clock Synchronization in SPICE-Based Simulators

Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

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