Charge Transfer at the Interfaces of Polycrystalline ZnO/Zn1-xMgxO/ZnO Heterostructures

Yoon, Jong‐Gul; Jung, Kyoung Ok; Kim, Hong Joon; Kim, Kyung Seop

doi:10.3938/jkps.53.2033

Cited by 6 publications

(1 citation statement)

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“…Alloying ZnO with MgO, which has a cubic structure and a broader direct bandgap of 7.7 eV, can tune the bandgap of ZnO by forming ternary Zn x Mg 1− x O compound. In the past few years, most of the studies on ZnMgO have been directed to the thin films and thin‐film‐based superlattices 3–10, which demonstrated bandgap engineering depending on the concentration of Mg in the film. However, there is still limited number of reports available about nanostructures 11–19 and nano‐heterostructures 20–23 based on ZnMgO in spite of growing interest in the ZnO‐based nanostructures 2.…”

Section: Introductionmentioning

confidence: 99%

Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Tang

Kwon

Park

2010

Physica Status Solidi (a)

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ZnMgO nanowires are synthesized on Si substrates using a vapor-transport method and their structural and luminescent characteristics are investigated using various techniques. The shift of the (002) peak in the X-ray diffraction measurements and the blue shift of the near-band-edge emission peak in the photoluminescence measurements of the ZnMgO samples are consistent with the incorporation of the small amount of Mg ($5 at.%) in ZnO. Individual ZnMgO nanowires are also investigated for their structural and luminescent properties, which show smaller amount of Mg incorporation ($1 at.%) into ZnO nanowires than in the case of ensemble of ZnMgO samples.

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Section: Introductionmentioning

confidence: 99%

Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Tang

Kwon

Park

2010

Physica Status Solidi (a)

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Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading

Yoon

Cho

Lee

et al. 2009

Applied Physics Letters

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We report on electrical characteristics of indium-tin-oxide (ITO) Schottky contacts to transparent n-n isotype heterojunctions composed of a compositionally graded Zn1−xMgxO (g-ZnMgO) and ZnO films fabricated on ITO-coated glass substrates. The transparent ITO Schottky contacts to g-ZnMgO/ZnO heterostructures resulted in excellent diode characteristics with the rectification ratios as high as 104 at a bias voltage of ±3.0 V. The effective Schottky barrier heights were about 0.6 eV and could be tuned by modifying the electrical properties of g-ZnMgO layer. The formation of high barrier Schottky contacts was discussed in conjunction with a band gap grading and a highly resistive surface layer of g-ZnMgO.

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Progress in Ultrasonic Spray Pyrolysis for Condensed Matter Sciences Developed From Ultrasonic Nebulization Theories Since Michael Faraday

Mwakikunga

2013

Critical Reviews in Solid State and Materials Sciences

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Charge Transfer at the Interfaces of Polycrystalline ZnO/Zn1-xMgxO/ZnO Heterostructures

Cited by 6 publications

References 0 publications

Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Characteristics of indium-tin-oxide Schottky contacts to ZnMgO/ZnO heterojunctions with band gap grading

Progress in Ultrasonic Spray Pyrolysis for Condensed Matter Sciences Developed From Ultrasonic Nebulization Theories Since Michael Faraday

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