Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si

Ramaker, David E.; Hutson, F. L.; Turner, N. H.; Mei, W. N.

doi:10.1103/physrevb.33.2574

Cited by 79 publications

(21 citation statements)

References 121 publications

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“…During this Ga uptake, we also monitored the shape of the Si LVV peak. Ramekar et al and Shivaprasad et al [18,19] have shown that the asymmetry in the Si LVV Auger peak on the surface is due to the 2p electron, which comprises the dangling bond component. We extract this information by measuring the upper and lower excursions in the (dN/dE) spectra which directly corresponds to the p-p electron state contribution (Lpp) and the s-s and s-p state contributions (Lss), respectively.…”

Section: Resultsmentioning

confidence: 97%

Ga-induced superstructures on the Si(111) 7×7 surface

Kumar

Mehta

Shivaprasad

2009

Applied Surface Science

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Section: Resultsmentioning

confidence: 97%

Ga-induced superstructures on the Si(111) 7×7 surface

Kumar

Mehta

Shivaprasad

2009

Applied Surface Science

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“…The deconvolution of the Si (LVV) auger peak in the N(E) mode, enables the extraction of the contribution of the p-electron states to the Auger transition. 23 The density of the dangling bonds (valence bad states), which are predominantly p-in character, can thus be monitored by observing changes in the intensity of the corresponding components. This becomes easily accessible in the Auger spectra acquired in the first derivative mode, since the upper excursion of the peak corresponds directly to the p-p electron state contribution (L pp ), and the lower excursion is due to the s-s and s-p states (L ss ).…”

Section: Adsorptionmentioning

confidence: 99%

Formation of In-Induced Superstructural Phases on Si(111)7 × 7 Reconstructed Surface

Govind¹,

Jithesh²,

Kurnar³

et al. 2009

j nanosci nanotechnol

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Adsorption of Group III metal ln nanostructures on Si surfaces is an exciting field that integrates the exotic electronic properties of the nano-phase and the p-doping abilities of In. We present here the kinetics of growth of In on (7 x 7) reconstructed Si(111) surface by experiments done in ultra high vacuum in the submonolayer regime, probed in-situ by surface sensitive techniques. Indium is observed to grow in the layer by layer mode. The study reveals adsorption behavior dictated by layer-dependent mobilities of In atoms that causes initial island formation that later wet the surface. However the desorption studies manifest the initial agglormeration of top layer atoms, which at higher temperatures overcome step-edge barriers and consequently two-dimensional layering of three-dimensional islands before sublimation occurs. Thus the study reveals the kinetic details of the anamolour behavior of the In/Si interface formation and desorption that can enable the tailor making of several nano-phases and structures of characteristic properties.

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“…31 This is due to a quantum interference between the direct Si 2p photoexcitation to the continuum and the KLV Auger emission after excitation of a 1s core hole at the K edge. However, the Si KLV Auger decay is calculated to occur at only 2% for the rate of the KLL Auger decay, 32 making it a very small effect. Also, the width of the Fano interference, taking into account the unfilled bandwidth of the Si conduction band and the lifetimes of the core states, should not extend as far as our point of measurement at 6 eV above the Si K edge.…”

Section: Experimental Test Of Atomic Scattering Factorsmentioning

confidence: 99%

Grazing‐incidence x‐ray photoemission spectroscopy and the accuracy of thickness measurements of CMOS gate dielectrics

Jach

Landree

2001

Surface & Interface Analysis

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Grazing-incidence x-ray photoelectron spectroscopy (GIXPS) is a method that offers promise as a nondestructive technique to measure the thickness and chemical state of ultrathin gate dielectric films. This method utilizes the non-linear dependence of the photoelectron yield on the radiation incidence angle to characterize a given layer structure. The accuracy of the results also depends on the input parameters, such as photoemission cross-sections, indices of refraction and electron attenuation lengths within the incident x-ray energy range of application (1-2 keV). Uncertainties in these parameters have consequences not only for GIXPS but also for other techniques that rely on them for materials analysis. We present a study of the impact of uncertainty in the photoionization cross-sections and atomic scattering factors on the GIXPS measurement of film thickness and density. A test of the accuracy of the index of refraction is demonstrated by measurements of a native oxide layer on Si at incident energies below and above the Si K edge. We also discuss the effects of surface and interface roughness. Published in

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Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si

Cited by 79 publications

References 121 publications

Ga-induced superstructures on the Si(111) 7×7 surface

Ga-induced superstructures on the Si(111) 7×7 surface

Formation of In-Induced Superstructural Phases on Si(111)7 × 7 Reconstructed Surface

Grazing‐incidence x‐ray photoemission spectroscopy and the accuracy of thickness measurements of CMOS gate dielectrics

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