Charge transport in pentacene and porphyrin-based organic thin film transistors

Berliocchi, M.; Manenti, M.; Bolognesi, A.; Carlo, Aldo Di; Lugli, Paolo; Paolesse, Roberto; Mandoy, F.; Natale, Corrado Di; Proietti, Emanuela; Petrocco, G.; D’Amico, A.

doi:10.1088/0268-1242/19/4/117

Cited by 14 publications

(7 citation statements)

References 22 publications

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“…The rise time going from 0 to −20 V is approximately 5 µs, while the fall time is close to 0.5 µs. This asymmetry is a characteristic feature of inverters with depleted load and is also observed experimentally [48]. During the state V in = 0 V, the load capacitance C L is fully charged and V out = −20 V. Changing the input to −20 V instantly opens the driver OTFT.…”

Section: Inverters With Depleted and Saturated Loadsupporting

confidence: 53%

Modeling of circuits and architectures for molecular electronics

2009

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The considerable progress of recent years have demonstrated the potential of molecular electronics to first enhance the capabilities of silicon electronics and, possibly, to substitute it when the intrinsic physical limits of scalability will be reached by CMOS technology. Despite such advances, a real alternative will only be possible if novel circuit and architecture concepts will be developed, which are fully suited to molecular devices. The purpose of the present paper is to discuss the theoretical activities carried out at the Institute for Nanoelectronics of the Technische Universität München in the field of molecular devices and circuits, critically assessing such work with respect to what has been proposed in the literature. Two approaches to molecular electronics will be analyzed. On the one side, we will deal with transistors based on organic films, and present circuit solutions based on inverters as basic blocks. On the other side, we will consider single molecule devices and the architectures that might allow system implementations.

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Section: Inverters With Depleted and Saturated Loadsupporting

confidence: 53%

Modeling of circuits and architectures for molecular electronics

2009

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“…We have made a proper definition of density of the states (DOS), mobility, and band alignment between OSC, oxides, and contact metals. 27) The energy misalignment between the contact Fermi energy level and the organic semiconductor transporting band edge is assumed to be negligible. 28,29) Therefore, the contact resistance is not attributed to the charge injection barrier but rather due to the intrinsic component resulted from the charge transport through the OSC film at source=drain contacts.…”

Section: Device Simulation and Materials Parametersmentioning

confidence: 99%

Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors

Han

Sun

et al. 2015

Jpn. J. Appl. Phys.

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This paper proposes a numerical simulation of the dual-gate organic thin film transistors (DG-OTFTs). It is revealed that electrically separable double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates. We also observe that the device characteristics are sensitive to the misalignment and the moving direction between top/bottom gates. A significant change to the driving ability and threshold voltage is found while misalignment exists. As the misalignment is larger, the driving-current reduces and threshold voltage increases quickly. Also the degradation is severe while the mismatch is moved to drain and relaxed with large channel length.

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“…For a high-performance OFET, the carrier mobility should be as high as possible. 7) Many factors such as the crystal structure, molecular arrangement and the surface morphology of the organic active layer should be considered when trying to obtain a high carrier mobility in an OFETs. The OFETs channel dimensions are usually measured using an optical microscope which provides an image of dark and light patterns representing the source/ drain electrode and active organic layer respectively.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of Organic Field-Effect Transistor by Scanning Raman Spectroscopy

Leung

Tojo

Murata

2005

Jpn. J. Appl. Phys.

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Organic molecular semiconductors, such as pentacene (C22H14), is of great interest for potential application in thin-film organic field-effect transistors (OFETs). Novel scanning Raman microscopy was applied to the analysis of OFETs. Effective channel sizes in top-contact and bottom-contact OFETs were determined from scanning Raman spectra. The bottom-contact OFET showed a sharp change in Raman intensity at the gold/pentacene interface over a short distance while the top-contact OFET showed a gradual change in Raman intensity over a wide region. In the case of a gold electrode deposited on pentacene, the real channel size could be as small as half of the intended size. This resulted in the decrease in effective channel size and thus in the overestimation of the calculated mobility. The small channel length could be attributed to the presence of gold (composite) inside the channel in the top-contact OFET.

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Charge transport in pentacene and porphyrin-based organic thin film transistors

Cited by 14 publications

References 22 publications

Modeling of circuits and architectures for molecular electronics

Modeling of circuits and architectures for molecular electronics

Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors

Characterisation of Organic Field-Effect Transistor by Scanning Raman Spectroscopy

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