Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Li, Guochang; Li, Shengtao

doi:10.1063/1.4960638

Cited by 17 publications

(28 citation statements)

References 18 publications

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“…Conversely, for higher loading ratio nanocomposites, higher than 5 wt% as results presented in this research and similar work reported in [38,39], the short separation distance due to the increased number of deep traps as shown in Fig. 9 (b) prompts the tunnelling process to dominate the transport of charge carriers to the adjacent traps in contrast to overcoming the energy barrier [26]. Consequently, the captured charges are able to escape from the traps located near the subsurface and continue to transport through the bulk, and charge carriers can continue to be injected into the nanocomposites as opposite field at the interface becomes low.…”

Section: Discussion With Tunneling Modelsupporting

confidence: 85%

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

Wang¹,

Qiang²,

Xu³

et al. 2018

J. Phys. D: Appl. Phys.

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Nanodielectrics have been expected to improve the electrical performance and considered as dielectrics for the future. It has been recognized that the electrical performance is close related to charge dynamics in the dielectrics material. However, the mechanism of charge dynamics in the interphase of nanodielectrics has not been fully understood, which cause the difficulty in understanding the effect of nanoparticle loading ratios and electric fields applied on the electrical properties. Recently, a model based on the tunneling process with the presence of deep traps has been suggested as one of the conceivable candidates for explaining charge dynamics in nanodielectrics, but the related experiment results are not discussed with tunnelling process. In this paper, the measurements including isothermal surface potential decay and space charge are conducted for the blend polyethylene incorporated with the untreated silica nanocomposites. According to the experimental observation compared with the unfilled blend polyethylene, the electrical properties of nanocomposites with high loading ratios of 2 wt%, 5 wt% and 10 wt% are worsened such as facilitated space charge accumulation and injection, and faster charge carriers transport. On the other hand, regarding the nanocomposites with the low loading ratios of 0.5 wt%, it was observed that slow transport of charge carriers, and suppressed space charge accumulation and injection. The effect of the lower and higher electric field on the electrical properties of the nanocomposites was similar for the low and high loading ratios. The tunnelling process associated with deep traps can effectively explain these observed phenomena of nanocomposites, it is therefore suggested for further explaining the electrical properties and charge dynamics in the nanodielectrics.

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Section: Discussion With Tunneling Modelsupporting

confidence: 85%

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

Wang¹,

Qiang²,

Xu³

et al. 2018

J. Phys. D: Appl. Phys.

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“…It is obvious, in the case of the hopping process, the mobility of charges is inversely proportional to the inter-trap distance. Moreover, in some previous research, tunnelling process is also suggested to explain charge transport in polymer nanocomposites with higher filler ratios [13,39]. There provides a good way to understand the suppressed charge transport in samples of low filler loading ratios and increased charge dynamics in that of high ratios.…”

Section: Discussionmentioning

confidence: 97%

“…the bulk with the growth of filler loading ratios. Moreover, EPB samples clearly show suppressed injection when compared to silica-based ones and an increase in initial builtup charge with the growth of filler loadings, which may refer to the presence of shallow traps in bulk [13] due to the morphology in bulk.…”

Section: Space Chargementioning

confidence: 98%

The effect of filler loading ratios and moisture on DC conductivity and space charge behaviour of SiO₂ and hBN filled epoxy nanocomposites

Qiang¹,

Wang²,

Wang³

et al. 2019

J. Phys. D: Appl. Phys.

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Nanocomposites those exhibit good insulation properties have already attracted numbers of research and their electrical properties are believed to be related to charge dynamics in bulk of materials. However, it is still unclear on how nanofiller loading ratios, surface treatment and resultant changes in morphology influence the charge dynamics of nanocomposites. In this paper, we have clearly mentioned the influence of adding nanoparticles into epoxy resins and the characteristics of the movement of charges in the materials based on combining analysis on morphology, DC conductivity and space charge measurements. The presence of spherical nanoparticles (SiO 2) introduced additional traps in bulk, which impaired the charge injection and reduced the mobility of charge carriers in samples of low filler loading ratios (e.g., 0.5 wt%). However, in silicabased samples of higher filler loadings, more nanoparticles further caused a higher density of traps, which resulted in lower average distance between arbitrary traps/ inter-particle surface distances and thus charge carriers required less energy when moving from one to another by hopping or the quantum tunnelling mechanism. The surface treatment of SiO 2 particles introduced deep traps which helped the separation of particles or related traps, and to some extent restricted the transport of charge carriers. In addition, hBN particles seem to act as barriers to charge injection and movement due to the layered structures and large numbers of resultant shallow traps in bulk. In term of moisture effect, the presence of water led to an obvious increase in charge injection and mobility, and resulted in the higher mobility of charge carriers in both base materials and within traps/particles of nanocomposites. The existence of water shells around spherical particles could contribute to a higher probability of the quantum tunnelling process and the formation of conductive percolation channels.

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“…Furthermore, when applied V G is greater than V TH , silicon bands bend more upward as shown in Figure 6d, and current conduction is governed by interface‐trap assisted tunneling (blue arrow) at low electric fields and partial F‐N tunneling (green arrow) at high fields as discussed in Figure 6b. Trap assisted tunneling is aid by low energy electrons tunneling to the intermediate interface, border/shallow traps, bulk/deep‐level traps [ 70 ] , and corresponding triangular barrier. However, F‐N tunneling is aid by electrons that have sufficient energy to directly overcome the triangular barrier.…”

Section: Resultsmentioning

confidence: 99%

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Gupta

Kumar

Sharma

2021

Adv Elect Materials

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The suitability of metal‐organic frameworks (MOFs) as functional materials for future electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface, low leakage current, and better compatibility is still an open challenge. Owing to the synergistic complementary properties of MOFs systems, a low‐cost copper‐metal‐organic nanoclusters (Cu‐MOCs) has been synthesized comprising inorganic copper metal unit allied organic m‐toluic acid ligand by facile sol–gel strategy. It offers large‐area thin‐films uniformity, high dielectric constant (κ ≈ 5.49), improved interfacial properties, dynamic switching behavior with the stimuli field, and extends the realization of metal‐organic‐framework dielectric for scalable complementary‐metal‐oxide‐semiconductor (CMOS) logic applications over customary hybrid counterparts. Various techniques such as single crystal X‐ray diffraction, X‐ray photoelectron spectroscopy, thermogravimetric analysis, and energy dispersive X‐ray spectroscopy have been used to validate the Cu‐MOCs formulation. In particular, the fabricated Cu‐MOCs, metal–insulator–semiconductor structures exhibit promising dynamic switching behavior responsive to the applied field, hysteresis‐free capacitance–voltage characteristics, low interfacial trap density (≈1.4 × 1011 eV−1 cm−2), low effective oxide charges (≈1.1 × 1011 cm−2), and noteworthy small leakage current density (≈1.29 nA cm−2 @ 1 V) ever since in electrical analysis. Cost‐effective novel Cu‐MOCs successfully demonstrate high‐performance, reliable gate dielectrics for next‐generation CMOS logic devices.

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Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Cited by 17 publications

References 18 publications

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

The effect of filler loading ratios and moisture on DC conductivity and space charge behaviour of SiO₂ and hBN filled epoxy nanocomposites

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

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Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Cited by 17 publications

References 18 publications

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

The effect of loading ratios and electric field on charge dynamics in silica-based polyethylene nanocomposites

The effect of filler loading ratios and moisture on DC conductivity and space charge behaviour of SiO2 and hBN filled epoxy nanocomposites

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

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The effect of filler loading ratios and moisture on DC conductivity and space charge behaviour of SiO₂ and hBN filled epoxy nanocomposites