Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors

Gholamrezaie, Fatemeh; Andringa, Anne-Marije; Roelofs, W. S. Christian; Neuhold, Alfred; Kemerink, Martijn; Blom, Paul W. M.; Leeuw, Dago M. de

doi:10.1002/smll.201101467

Cited by 66 publications

(78 citation statements)

References 25 publications

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“…This result has been further utilized in the development of OFETs resilient against bias stress by using gate dielectrics with high ionization potentials, such as the fluoropolymer Cytop . Alternatively, the incorporation of a nanometer‐thick interlayer between the OSC and the gate dielectric can either facilitate charge transfer or provide a nanoscale physical barrier that reduces charge tunneling …”

Section: The Effects Of Bias Stress On Organic Transistorsmentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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In this progress report, recent advances in the development of organic transistors with superior bias stress stability and in the understanding of the charge traps that degrade device performance under prolonged bias stress are reviewed, with a particular focus on materials science and engineering methods. The phenomenological aspects of bias stress effects and the experimental methods for investigating charge traps are described. The recent progress in the bias stress stability of organic transistors is discussed in terms of those components that are the main focus of attempts to improve bias stress stability, i.e., organic semiconductor layers, gate dielectrics, and source/drain contacts. A brief summary of this progress is presented and the outlook for future research in this field is assessed. This report aims to summarize recent progress in this field and to provide some guidelines for studying bias stress-induced charge-trapping phenomena.

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Section: The Effects Of Bias Stress On Organic Transistorsmentioning

confidence: 99%

Recent Advances in the Bias Stress Stability of Organic Transistors

Park

Kim

Choi

et al. 2019

Adv Funct Materials

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“…Though this model provides a nice qualitative explanation for the data, the dipole contribution is not sufficient to explain a threshold voltage shifts up to 60 V. In fact, in order to explain such a large threshold voltage shift invoking a dipole layer, the molecular dipole moments must exceed the unrealistic value of 50 debyes. Therefore, as an alternative model to explain V T shifts of the order of tens of volts, SAM‐related space charge layers have been recently proposed by Gholamrezaie et al The surface potential of the gate dielectric modified by an SAM was measured by means of scanning Kelvin probe microscopy (SKPM), proving that the CH 3 ‐SAM is inactive as expected for a nonpolar molecules such a –CH 3 is. The NH 2 –SAM traps positive charges, while F–SAM traps negative charges, in line with the NH 2 molecule being less electronegative than F ones.…”

Section: Dielectrics Surface Modification Strategies For Organic–biolmentioning

confidence: 99%

Tailoring Functional Interlayers in Organic Field‐Effect Transistor Biosensors

et al. 2014

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This review aims to provide an update on the development involving dielectric/organic semiconductor (OSC) interfaces for the realization of biofunctional organic field-effect transistors (OFETs). Specific focus is given on biointerfaces and recent technological approaches where biological materials serve as interlayers in back-gated OFETs for biosensing applications. Initially, to better understand the effects produced by the presence of biomolecules deposited at the dielectric/OSC interfacial region, the tuning of the dielectric surface properties by means of self-assembled monolayers is discussed. Afterward, emphasis is given to the modification of solid-state dielectric surfaces, in particular inorganic dielectrics, with biological molecules such as peptides and proteins. Special attention is paid on how the presence of an interlayer of biomolecules and bioreceptors underneath the OSC impacts on the charge transport and sensing performance of the device. Moreover, naturally occurring materials, such as carbohydrates and DNA, used directly as bulk gating materials in OFETs are reviewed. The role of metal contact/OSC interface in the overall performance of OFET-based sensors is also discussed.

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“…4 These are ob-2 viously desired qualities in particular for manufacturing gate dielectrics in organic field-effect transistors (OFET), for which the deposition of an organic semiconductor directly onto the untreated standard SiO 2 substrate leads to ill reproducible results in terms of threshold/onset voltage and charge carrier mobilities due to the presence of defects. 5,6 The effect of SAM functionalization on OFET performances is often remarkable since it leads to controllable shifts of the threshold voltage (which depends on the chemical nature of the SAM itself), it allows to modulate the charge carrier mobility of the overlying organic semiconductor, [7][8][9][10][11][12][13][14][15] and even to control the band gap opening in highly conductive materials such as graphene. 16 The microscopic origin of the modulating effect of SAM on OFET performances is a matter of intense theoretical studies.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Alkylsilane and Fluoroalkylsilane Self-Assembled Monolayers on SiO₂ by Molecular Dynamics Simulations

et al. 2016

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We present molecular dynamics simulations of self-assembled monolayers (SAMs) chemisorbed on an atomically flat amorphous silicon dioxide substrate. We model two prototypical SAM-forming alkylsilanes, octadecyl trichlorosilane (OTS) and 1H,1H,2H,2H-perfluorodecyl trichlorosilane (FDTS), that find widespread use in organic electronic applications. Crucially, our model does not rely on an explicit bonding between the alkylsilane and the substrate, thus allowing for the spontaneous organization of molecules into regular structures, that we studied as a function of coverage. By comparing the calculated tilt angle, film thickness, and lattice parameters with experiments, we conclude that the simulated morphologies are quantitatively consistent with the experimental evidences, demonstrating the accuracy of the simulation methodology. We take advantage of the atomistic resolution of the calculations for carrying out a detailed one-to-one comparison between the structure and the electronic properties of the two SAMs. In particular we find that OTS molecules show a coverage-dependent tilt, while FDTS molecules are always vertically oriented, regardless of the coverage. More importantly for organic electronic applications, we observe that OTS SAMs do not alter the electrostatic potential of silica, while FDTS SAMs induce a negative voltage shift which increases with coverage and saturates at about -2 volts.

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Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors

Cited by 66 publications

References 25 publications

Recent Advances in the Bias Stress Stability of Organic Transistors

Recent Advances in the Bias Stress Stability of Organic Transistors

Tailoring Functional Interlayers in Organic Field‐Effect Transistor Biosensors

Structural Characterization of Alkylsilane and Fluoroalkylsilane Self-Assembled Monolayers on SiO₂ by Molecular Dynamics Simulations

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Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors

Cited by 66 publications

References 25 publications

Recent Advances in the Bias Stress Stability of Organic Transistors

Recent Advances in the Bias Stress Stability of Organic Transistors

Tailoring Functional Interlayers in Organic Field‐Effect Transistor Biosensors

Structural Characterization of Alkylsilane and Fluoroalkylsilane Self-Assembled Monolayers on SiO2 by Molecular Dynamics Simulations

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Product

Resources

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Structural Characterization of Alkylsilane and Fluoroalkylsilane Self-Assembled Monolayers on SiO₂ by Molecular Dynamics Simulations