Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputtering

Abstract

A thin-film structure comprising Al 2 O 3 /Al-rich Al 2 O 3 /SiO 2 was fabricated on Si substrate. We used radio-frequency magnetron co-sputtering with Al metal plates set on an Al 2 O 3 target to fabricate the Al-rich Al 2 O 3 thin film, which is used as a charge storage layer for nonvolatile Al 2 O 3 memory. We investigated the charge trapping characteristics of the film. When the applied voltage between the gate and the substrate is increased, the hysteresis window of capacitance-voltage (C-V) characteristics becomes larger, which is caused by the charge trapping in the film. , which is 2.6 times larger than that of the trap memory using SiN as the charge storage layer. The device structure would be promising for lowcost nonvolatile memory.

Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack

“…The charge trapping capacity is affected by the sequence of the V g sweeping direction. [20][21][22] However, the most important role of the AlO x layer is the formation of a large barrier height between AlO x and ZrHfO. 3(b) includes the C-V hysteresis curves in the reverse sweep sequence, i.e., from þ6 V to À6 V and then back to þ6 V. The C-V curve from þ6 V to À6 V overlaps with that of the fresh C-V curve, i.e., the same V FB , indicating the poor electron trapping capability of the embedded AlO x layer.…”

Improvement of charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films by thermal annealing

“…Recently, we fabricated a simple trap memory consisting of a SiO 2 tunnelling insulator, an Al-rich Al 2 O 3 charge trapping layer, and an Al 2 O 3 blocking insulator [12]. The capacitance-voltage (C-V) characteristics exhibit a large hysteresis.…”