Charge Trapping in MOSFETS: BTI and RTN Modeling for Circuits

Wirth, Gilson; Cao, Yu; Velamala, Jyothi; Sutaria, Ketul B.; Satō, Takashi

doi:10.1007/978-1-4614-7909-3_29

Cited by 3 publications

(1 citation statement)

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“…Random Telegraph Noise (RTN), also called Random Telegraph Signal, is one of these sources that, different from variations of physical dimensions and doping profiles, causes a time dependent variability [3,4]. It results in drain current fluctuations on MOS transistors that are consequence of the electrical charge trapping phenomena [5,6].…”

Section: Introductionmentioning

confidence: 99%

Jitter due to Random Telegraph Noise: a Study on the Time Dependent Variability of a Ring Oscillator

Grosbelli Barbosa,

Pinheiro Garcia,

Fedrizzi Vidor

et al. 2023

JICS

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Random Telegraph Noise is a relevant source of variability in integrated circuits and a growing issue due to device scaling. Jitter is one of its consequences; therefore, it is an important parameter of performance measurements for electronic components and systems. In this paper, the relationship between Random Telegraph Noise and different concepts of jitter is studied. Firstly, a gate delay variability study of a CMOS inverter is discussed. Then, an absolute, a periodic, and a cycle-to-cycle jitter are evaluated in a five-stage ring oscillator. All the data were generated with a spice simulator modified to properly account for Random Telegraph Noise, using the Monte Carlo technique.

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Section: Introductionmentioning

confidence: 99%