Charging effects from electron beam lithography

Cummings, K. D.; Kiersh, M.

doi:10.1116/1.584528

Cited by 34 publications

(25 citation statements)

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“…This effect is caused by the artifact of the electron beam lithography process employed in the fabrication: when two elements are closer to each other, their actual individual sizes under the same resist exposure conditions become larger due to local charging effects. [ 26 ] Thus, as k 11 increases, the actual sizes for L 1 and L 2 increase, redshifting the branches. The good agreement between measured and simulated refl ectance spectrum color maps validates our physical picture of the high-effi ciency photon-SPP conversion process.…”

Section: Full Paper Full Paper Full Papermentioning

confidence: 92%

Symmetry‐Broken Metamaterial Absorbers as Reflectionless Directional Couplers for Surface Plasmon Polaritons in the Visible Range

Fan

Burns

Naughton

2014

Advanced Optical Materials

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directional coupling between propagating photons and surface plasmon polaritons (SPPs) in the visible range is a growing pursuit, due to its perceived essential role in nanoplasmonic and nanophotonic applications. [11][12][13] Here, we demonstrate that asymmetric, two-element, periodic, metal-insulator-metal (MIM) structures, perhaps representing the simplest gradient-index scenario, can serve as refl ectionless directional converters between free photons and SPPs operable in the visible frequency range. The simplicity of this two-element MIM structure allows for the fabrication of testable samples for operation with visible light. Simulated dispersion relations of this structure reveal the nature of the high-effi ciency coupling process: interactions between propagating modes caused by the broken refl ection symmetry (RS) and localized modes generated by individual MIM elements that are well understood in the language of MM "perfect absorbers". [ 14,15 ] There are regions in k -space where these interactions are very strong, such that the two modes hybridize to two new quasi-particles, [ 16,17 ] with concomitant Rabi splitting. [ 18,19 ] Experiments on samples with tuned parameters confi rm the simulated dispersion maps, and demonstrate a large Rabi splitting. Absolute refl ectance measurements under normal incidence with small aperture angle (3.75°) on samples with areas less than 60 × 60 µm 2 were carried out using a modifi ed microscope design. This scheme avoids the common problem of averaging over large incident angles when measuring optical properties of small-area samples by conventional methods. [ 20 ] Direct experimental evidence is obtained for refl ectionless (less than 8% measured refl ectance) directional SPP coupling in the visible range, with more than 88.8% of the channeled SPP energy being directed to the designed direction. Our results are meaningful for integrated nanoplasmonics, plasmonic logic, and plasmonic light harvesting, among others. Results and Discussions Localized Mode AnalysisUsing the measurement scheme described in Experimental Section, we performed refl ectance measurements to study Gradient-index meta-surfaces have been shown to have the ability to manipulate wavefronts at will in a refl ectionless manner in the GHz range, including the extreme example of converting freely propagating waves into surface waves with high effi ciency. Upon approaching the optical regime, the gradient-index concept encounters diffi culties due to fabrication limitations. Here, it is theoretically and experimentally demonstrated that asymmetric, periodic, two-element metal-insulator-metal structures can serve as refl ectionless directional converters between freely propagating visible photons and surface plasmon polaritons (SPPs). Coupling between propagating modes caused by the broken symmetry and localized modes generated by individual elements is shown to be the mechanism of this high-effi ciency process, yielding an observed Rabi splitting of ∼135 meV. Direct experimental evidence is obtained fo...

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Section: Full Paper Full Paper Full Papermentioning

confidence: 92%

Symmetry‐Broken Metamaterial Absorbers as Reflectionless Directional Couplers for Surface Plasmon Polaritons in the Visible Range

Fan

Burns

Naughton

2014

Advanced Optical Materials

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“…This observation is similar to that of high energy electron beam lithography. 13 No significant line deflection or pattern distortion was observed on patterns exposed on a silicon substrate coated with a 200 nm thick SiO 2 film. Patterns exposed on a silicon substrate having 480 nm thick SiO 2 layer showed significant line deflection 2 kV.…”

Section: Line Deflection Measurementsmentioning

confidence: 96%

Charge induced pattern distortion in low energy electron beam lithography

Satyalakshmi¹,

Olkhovets²,

Metzler³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffect of incident current and energy on surface charging and electron emission of hydrogenated diamond films induced by low energy electron irradiation Charge induced pattern distortions in low voltage electron beam lithography in the energy range of 1 to 5 kV were investigated. Pattern distortion on conducting substrates such as silicon was found to be small, while significant pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates caused by charge trapping and deflection of the incident electron beam. The nature and magnitude of pattern distortions were found to be influenced by the incident electron energy, pattern size, electrical conductivity, and secondary electron emission coefficient of the substrate. Theoretical modeling predicts the electron beam deflection to be directly proportional to the trapped surface charge density and inversely proportional to the accelerating voltage.

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“…Currently, LESiS does not model hole recombination, so positive charges can only be eliminated when a negative charge is tabulated in the same bin, and vice versa. Laboratory experiments have found that charge build-up can be measured in a resist long after exposure, 9,10 so it is assumed that lifetime of electrons or holes is significantly longer than the exposure time. This data can be fed back into the simulation to model time dependent effects.…”

Section: Methodsmentioning

confidence: 99%

“…10 This experiment, in which 1700 EUV photons were run -simulating a dose of 27.2 mJ/cm 2 , modeled the effect of charging in EUV exposures. A 10x10 nm EUV photon source exposed a 60 nm resist film on top of a silicon substrate; 10 nm of vacuum separated the resists and the source.…”

Section: Coulombic Force Modelingmentioning

confidence: 99%

Energy deposition and charging in EUV lithography: Monte Carlo studies

Wiseheart

Narasimhan

Grzeskowiak

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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EUV photons expose photoresists by complex interactions including photoionization to create primary electrons (~80 eV), and subsequent ionization steps that create secondary electrons (10-60 eV). The mechanisms by which these electrons interact with resist components are key to optimizing the performance of EUV resists and EUV lithography as a whole. As these photoelectrons and secondary electrons are created, they deposit their energy within the resist, creating ionized atoms along the way. Because many photo-and secondary electrons can escape the resist through the surface, resists can become charged. Charging and energy deposition profiles within the resist may play a role in the sensitivity and line-edge roughness of EUV resists.In this paper, we present computational analysis of charging-influenced electron behavior in photoresists using LESiS (Low energy Electron Scattering in Solids), a software developed to understand and model electron-matter interactions. We discuss the implementation of charge and tracking and the model used to influence electron behavior. We also present the potential effects of charging on EUV and electron beam lithography by investigating secondary electron blur in charging and non-charging models.

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Charging effects from electron beam lithography

Cited by 34 publications

References 0 publications

Symmetry‐Broken Metamaterial Absorbers as Reflectionless Directional Couplers for Surface Plasmon Polaritons in the Visible Range

Symmetry‐Broken Metamaterial Absorbers as Reflectionless Directional Couplers for Surface Plasmon Polaritons in the Visible Range

Charge induced pattern distortion in low energy electron beam lithography

Energy deposition and charging in EUV lithography: Monte Carlo studies

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