Chemical and Mechanical Properties of Cu Surface Reaction Layers in Cu-CMP to Improve Planarization

Kanki, Tsuyoshi; Kimura, Takahiro; Nakamura, Tomoji

doi:10.1149/2.023309jss

Cited by 21 publications

(8 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] Chemical mechanical planarization (CMP) is an essential procedure in the fabrication of Giant Large Scale Integrated circuit. [5][6][7][8][9] CMP process can eliminate undesirable topography caused by deposition of thin films over structured features, and provide necessary conditions for the fabrication of the next wiring level on the plane surface. Planarization is achieved for the slurry abrasives are responsible for mechanical action in combination with the polishing pad.…”

mentioning

confidence: 99%

Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI

Zhang

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Multi-layered copper wiring chemical mechanical planarization (CMP) of Giant Large Scale Integrated circuit (GLSI) is one of the key processes for the improvement of microelectronic technique. During copper interconnection CMP, high removal rate (RR) and lower surface roughness for copper film are required. Slurry is one of the key factors to achieve highly effective planarization for copper film, and is also one of the research hotspots. In this work CMP and electrochemical behavior of copper with the synergistic effect of chelating agent and Ammonium Dodecyl Sulfate (ADS) using a new type alkalescent slurry was investigated. The slurry was composed of colloidal silica, FAOII chelating agent, surfactant (ADS) and hydrogen peroxide. The Potentiodynamic polarization plots revealed that FAOII chelating agent had strong chelating ability to improve copper removal rate, which was verified by polishing experiments. When FAOII concentration increasing from 0 to 5wt%, copper RR dramatically increased from 377Å/min to 5523Å/min. [CuR(NH 2 ) 2 ] 2+ as one of the key generated products relating to RR improvement was verified by XPS. Meanwhile, with the addition of ADS, the static etch rate decreased from 1080Å/min to 442Å/min, and the surface roughness decreased from 4.81nm to 2.69nm, which indicated that ADS acted as a surfactant and an inhibitor simultaneously. From the result it can be seen that high and controllable removal rate and low surface roughness can be achieved by adjusting the concentration of FAOII chelating agent and anionic surfactant ADS. Slurry is stabilized till 48 hours. Such simple and component adjustable alkalescent slurry has certain guiding significance to practical production.

show abstract

mentioning

confidence: 99%

Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI

Zhang

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Peng et al [7] used AFM diamond probe to cut nanoscale groove in an Al film. Kanki et al [8] investigated the characteristics of CMP and utilized the chemical reaction layer formed by slurry to improve the planarization of the CMP. Various slurry pH values, dipping times, and material electrolytic polarization characteristics were analyzed.…”

Section: Introductionmentioning

confidence: 99%

“…Various slurry pH values, dipping times, and material electrolytic polarization characteristics were analyzed. Kanki et al [8] also sliced Cu specimens dipped in slurry, and the thickness of the chemical reaction layer was determined through transmission electron microscopy. In optical semiconductor manufacturing processes, chemical mechanical polishing (CMP) is a key technology for the planarization of wafers.…”

Section: Introductionmentioning

confidence: 99%

A Study of Specific Down Force Energy and Cutting Depth of Sapphire Substrate Affected by Different Dipping Temperatures of Slurry

Lin¹,

Ding²,

Chen³

2017

ujme

View full text Add to dashboard Cite

This article studies the change of specific down force energy and cutting depth of sapphire substrate when sapphire substrates were dipped in different temperatures of slurry. It involved applying small down force in cutting sapphire substrates by atomic force microscope (AFM) before dipping them in slurry in order to obtain the SDFE value of without dipping slurry. Next, small down force was applied to cut sapphire substrates dipped in slurry for varying dipping temperatures to obtain the SDFE reaction values of dipping slurry with different dipping temperatures. Nanocutting was performed by AFM with a small constant down force to obtain the cutting depths of sapphire substrate for the different dipping temperatures of slurry. The results of this study indicated that the dipping temperature of slurry increased, the SDFE reaction value of sapphire substrate decreased and the cutting depth of sapphire substrate with a constant down force increased.

show abstract

“…16 Despite its advantages as biocide, the self-decomposition of the hydrogen peroxide is more easily to be occurred in the weakly alkaline slurries and gives very short shelf lives, so its concentration should be controlled in a lower level. 17 As the broad-spectrum nonoxidizing biocides, cationic surfactants and isothiazolinones are widely used for bacterial growth control in various fields and the combined applying of many biocides would has much better effects in prevent bacteria growth. 18,19 In this experiment, dodecyl dimethyl benzyl ammonium chloride (DDBAC, a cationic surfactant) and 1,2-Benzisothiazol-3-one (BIT, a isothiazolinone-type biocide) were used to resist bacteria.…”

mentioning

confidence: 99%

A High Antibacterial Weakly Alkaline Barrier Slurry with the Tunable Selectivity

Luan

Gao

et al. 2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Barrier chemical mechanical planarization (CMP) is a critical process in the manufacturing of integrated circuits (ICs). Bacterial infestation, the material removal rate (MRR) selectivity and slurry aging are important factors in the evaluation of barrier CMP slurry. In this paper, H2O2 concentration in a lower level was used to adjust the rate selectivity and enhance removal rate on copper to ensure the trench copper thickness reaches the target value. The effects of dodecyl dimethyl benzyl ammonium chloride (DDBAC) and 1,2-Benzisothiazol-3-one (BIT) on bacteria growth were investigated. The total organic carbon analysis and the after-cleaning defect map of the patterned wafer proved the DDBAC and BIT contained in the barrier slurry could prevent bacteria formation within four weeks. The effect of aging on the performance was investigated systematically for the slurry contained containing H2O2, DDBAC and BIT. Aging has been shown to have a small effect on zeta potential, particle size and viscosity of the slurry. The polishing rate and pH decrease with time due to chemical degradation of a part of H2O2. Luckily, the rate selectivity still remains at a high value over time and the barrier slurry after 30d has an effective performance in topography modification.

show abstract

Chemical and Mechanical Properties of Cu Surface Reaction Layers in Cu-CMP to Improve Planarization

Cited by 21 publications

References 38 publications

Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI

Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI

A Study of Specific Down Force Energy and Cutting Depth of Sapphire Substrate Affected by Different Dipping Temperatures of Slurry

A High Antibacterial Weakly Alkaline Barrier Slurry with the Tunable Selectivity

Contact Info

Product

Resources

About