Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium

Abstract

Articles you may be interested inChemical beam epitaxy growth of III-V semiconductor nanowires AIP Conf. Proc. 1569, 355 (2013); 10.1063/1.4849293 High growth rate of III-V compounds by free carrier gas chemical beam epitaxy J. Vac. Sci. Technol. B 13, 55 (1995); 10.1116/1.587985 Lightenhanced molecularbeam epitaxial growth in II-VI and III-V compound semiconductors J. Vac. Sci. Technol. B 6, 779 (1988); 10.1116/1.584374 Instabilities of (110) III-V compounds grown by molecular beam epitaxyTriisopropyl indium ͑TIPIn͒ has been investigated as an alternative to trimethyl indium for use in chemical-beam epitaxy ͑CBE͒. In previous CBE studies of GaAs/AlGaAs growth, the replacement of methyl-containing precursors with ethyl-and isopropyl-containing precursors has been shown both to widen the substrate temperature window available for growth, and also to reduce unintentional carbon incorporation in the grown layers. In the present study of ͑100͒In x Ga 1Ϫx As ͑0рxр0.1͒ growth using the new TIPIn source, in situ modulated-beam mass spectrometry studies have demonstrated a similar, and technologically very important, widening of the substrate temperature window. Furthermore, use of the new precursor combination, TIPIn and triisopropyl gallium, is also shown to generate state-of-the-art InGaAs material with electrical and optical properties directly comparable to corresponding material grown using molecular-beam epitaxy.

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

“…This methyl exchange can be a mechanism for incorporating additional indium by scavenging Ga species (in the present case as the Ga-methyls originate from the TMIn species exchanging with TEGa) if enough active N is available to consume the physisorbed In/In-methyl layer. However, the use of precursors with the same alkyl species, all ethyl or all isopropyl for this temperature regime [29], should alleviate mixed alkyl-induced scavenging.…”

Avaliação De Precursores Para Crescimento De Gainnas Pela Técnica Movpe Para Fabricação De Células Solares

“…Portanto, o objetivo principal desse projeto é identificar quais parâmetros influenciam a incorporação do carbono no GaInNAs para minimizar a contaminação residual do carbono. Para isso, são testados os diferentes parâmetros de crescimento a partir de precursores completamente isentos de metil, tais como tri-isopropil-índio (TIPIn), tri-terc-butil-gálio (TTBGa), tri-etil-gálio (TEGa), juntamente com terc-butil-arsina (TBAs) e terc-butil-hidrazina (TBHy (Dock/Chemicals 2016b;FitzGerald et al 1992;Jones et al 1992;Nattermann et al 2015), o índio (Chen et al 1993;Freer et al 1996;Irvine et al 1993;Vanchagova et al 1976), o nitrogênio (Ptak et al 2002;Sterzer et al 2016;Dock/Chemicals 2016a;Nishide et al 1998;Pohl et al 1999;Volz et al 2004) e o arsênio (Chen et al 1987;Dock/Chemicals 2015;Hakkarainen et al 2004;Nattermann et al 2015;Tang et al 2001;Volz et al 2004). Porém, até o momento, os precursores propostos neste trabalho para o crescimento de GaInNAs nunca foram utilizados simultaneamente.…”