Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

McCann, R.; Roy, Susanta Sinha; Papakonstantinou, Pagona; Bain, Michael; Gamble, H.S.; McLaughlin, James

doi:10.1016/j.tsf.2004.11.151

Cited by 52 publications

(31 citation statements)

References 36 publications

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“…ECR discharges have been demonstrated as useful, electrodeless, high-density sources of excited and charged species at low pressure [19], which can achieve successful incorporation of N into the ultra-thin ta-C films. An oxygen signal at 532.0 AE 0.2 eV is the result of air exposure during the experiment and sample transport [16][17][18]. In addition, the two peaks located at 101.5 AE 0.2 and 152.6 AE 0.2 eV are attributed to Si2p and Si2s spectra originated from Si substrate, respectively [17,18].…”

Section: Resultsmentioning

confidence: 98%

“…The peak centered at 284.2 AE 0.2 eV is caused by the photoelectrons excited from C1s spectrum [16]. Compared with the pristine ta-C film, there is apparent N1s spectrum which peak position is about 399.2 AE 0.2 eV [17,18]. ECR discharges have been demonstrated as useful, electrodeless, high-density sources of excited and charged species at low pressure [19], which can achieve successful incorporation of N into the ultra-thin ta-C films.…”

Section: Resultsmentioning

confidence: 99%

“…An oxygen signal at 532.0 AE 0.2 eV is the result of air exposure during the experiment and sample transport [16][17][18]. In addition, the two peaks located at 101.5 AE 0.2 and 152.6 AE 0.2 eV are attributed to Si2p and Si2s spectra originated from Si substrate, respectively [17,18]. In order to better investigate the change of nitrogen concentration during the plasma nitriding process, the nitrogen content (N at.%) with the function of N 2 flow and substrate bias are both illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The G-peak position has been found to shift to higher wave number with decreasing sp 2 content in the film and consequently shift in G-peak position can reflect the change of sp 3 /sp 2 ratio [2]. The Q parameter is a description of the line-shape asymmetry of Raman spectrum, which can provide a binary test (high or low) for ta-C films with very high sp 3 content to some extent combined with the analysis of G peak position (v max ) and its dispersion [18,24]. The Q value decreases sharply as sp 3 fraction increases [18,24].…”

Section: Physical Structures Of Nitrogenated Ta-c Filmsmentioning

confidence: 99%

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Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

Wang

Zhang

Zhou

et al. 2010

Applied Surface Science

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Physical Structures Of Nitrogenated Ta-c Filmsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

Wang

Zhang

Zhou

et al. 2010

Applied Surface Science

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“…attributed to transition of C1s electrons to σ * , sp 3 C-C, bonds [111]. A very low intensity peak is appeared around 287.5 eV, which is attributed to C=O π * bonding, probably because of the exposure to atmosphere [32,111].…”

Section: Raman Spectroscopymentioning

confidence: 99%

Fabrication and characterization of adherent diamond-like carbon based thin films on polyethylene terephthalate by end hall ion beam deposition

Ashtijoo

Bhattacherjee

Sutarto

et al. 2016

Surface and Coatings Technology

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The application of Polyethylene terephthalate (PET) has been steadily increasing during recent years. However, its low wear resistance, high gas permeation rate and poor biocompatibility have significantly limited its applications in some specific areas. On the contrary, diamond-like carbon (DLC) possesses many unique properties such as the high hardness, low friction coefficient, high transparency, good gas barrier, excellent biocompatibility, and low synthesis temperature, which makes it an ideal coating material for modifying the surfaces of PET for applications as food and beverage containers and biomedical implants. Nevertheless, the adhesion of DLC on PET is poor due to the high stress induced by ion bombardment during DLC deposition and the large mechanical property mismatch between the coating and the substrate. Therefore, it is very important to develop techniques to lower the stress of DLC and to enhance the adhesion strength of DLC to PET.In the present thesis work, low energy end-hall (EH) ion source and element (N and Si) doping were used to deposit DLC to lower its internal stress and ion beam treatment was performed to modify the surface of PET to enhance the adhesion between DLC and PET. In addition, two different hydrocarbon gases (CH 4 and C 2 H 2 ) were used as precursors for DLC deposition in order to understand the effect of precursor gas. The structure and properties of the treated PET and deposited DLC films were characterized by various advanced techniques: The adhesion of DLC to PET was assessed using scratch testing; the composition and bonding states of DLC and treated PET were analyzed by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure (NEXAFS); the hardness and Young's modulus were measured by nano-indentation; the tribological properties of the coated materials were evaluated by pin-on-disk sliding testing; and the surface tomography and surface roughness were investigated by atomic force microscopy and N forms sp 3 C-N and sp 2 C=N bonds in the films. Consequently, the hardness values decrease from 11.5 GPa for pure DLC to 7.0 GPa for N-DLC samples whereas the hardness of Si-DLC increases with increasing the silicon content. In addition, N doping can reduce residual stress of DLC and thus increases adhesion of DLC. The DLC films deposited using methane show better properties than using acetylene. By optimizing the conditions, dense, smooth, and adhesive DLC films have been deposited onto PET using EH ion source by combining N doping and O ion treatment with methane as precursor gas.iv AKNOWLEDGEMENTS

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Derivative Compounds and Analogs

Delhaès¹

2013

Carbon‐based Solids and Materials

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Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

Cited by 52 publications

References 36 publications

Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

Fabrication and characterization of adherent diamond-like carbon based thin films on polyethylene terephthalate by end hall ion beam deposition

Derivative Compounds and Analogs

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