Chemical composition, state of oxygen and its reaction ability on zinc oxide according to XPS and UPS SR data

Devyatov, V. G.; Черкашин, А. Е.; Кощеев, С. В.

doi:10.1016/0168-9002(91)90633-2

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…To explain the modification of conductivity [Δσ] and surface potential [Δφ] by O 2 adsorption on TiO 2 , Göpel et al postulated the formation of O 2 - upon chemisorption of oxygen. The superoxide ion O 2 - was observed also in the case of other semiconductors such as ZnO, MgO, and SnO 2 , although the metal ion orbitals available for interaction with the adsorbed ion vary considerably. Superoxide and peroxide ions, O 2 2- , have been detected in photochemical studies involving oxygen and TiO 2 powder or in an aqueous suspension of TiO 2 . , The thermally-induced interconversion between these two species has also been reported for O 2 adsorption on the Pd[111] surface …”

Section: Discussionmentioning

confidence: 96%

Defect Sites on TiO₂(110). Detection by O₂ Photodesorption

1997

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The TiO2(110) surface, prepared with different densities of anion vacancy defect sites, has been investigated by studies of O2 photodesorption at 105 K. Two separate O2 photodesorption processes, α1 and α2, are detected and are postulated to be due to the presence of two different types of defect sites produced by annealing the crystal in vacuum before O2 adsorption. The measured photodesorption cross sections for these two states are Q α 1 -O 2 = (3.1 ± 0.2) × 10-16 cm2 and Q α 2 -O 2 = (4.3 ± 0.3) × 10-17 cm2 for 3.96 ± 0.07 eV photons. Both O2 states photooxidize CO chemisorbed on the reduced TiO2(110) surface. While the yield of the CO2 photoproduct increases with increasing crystal annealing temperature (and increasing defect coverage), the yield of α1-O2 and α2-O2 passes through a maximum at an annealing temperature of ∼600 K.

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Section: Discussionmentioning

confidence: 96%

Defect Sites on TiO₂(110). Detection by O₂ Photodesorption

1997

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“…3(e)) displayed clear peaks for ZnO binding orbitals, consistent with those previously reported for single-crystal surfaces. [20,21] NP layer between the Au and Al regions to facilitate calibration (Fig. 4).…”

Section: Resultsmentioning

confidence: 99%

Effects of Thermal Pressing on ZnO Nanoparticle Layers Deposited by Drop Casting

Yoshida

Shinohara

Itohara

et al. 2016

e-J. Surf. Sci. Nanotech.

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ZnO nanoparticle (NP) layers were formed using a simple drop casting process. Applying thermal pressing clearly improved the surface morphology and electrical properties of the as-deposited ZnO NP layers as well as significantly enhanced the transistor characteristics of the NP layers. The effects of thermal pressing on the film surface properties were evaluated by X-ray photoelectron spectroscopy, Kelvin probe microscopy, and photoluminescence spectroscopy. Results suggest that thermal pressing improved the transistor characteristics by decreasing NP surface defects such as oxygen vacancies.

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