Chemical Mechanical Polishing (CMP) Processes for Manufacturing Optical Silicon Substrates with Shortened Polishing Time

Zhong, Zhang; Tian, Yebing; Ng, Jun Hao; Ang, Y. J.

doi:10.1080/10426914.2013.852206

Cited by 19 publications

(8 citation statements)

References 19 publications

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“…In this study, we chose a 5.0 Å depth case to compare with other papers. Zhong et al [53] indicate a greatly lower comparing to this research ratio because they applied a fixed abrasive CMP following a polishing process with a fabric cloth pad. Other experimental studies [54][55][56] survey an entirely polishing process, in which the sliding motion is an important factor in the initial and middle steps, therefore, the ratio is lower than this research.…”

Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 65%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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Our aim with this study was a new insight into the sub-nanoscale of polishing and provides the atomic view of the material removal and wear mechanisms by carrying out molecule dynamics simulation. We proposed and analyzed a model with a diamond abrasive particle that sliding or rolling on the surface of GaN workpieces. The authors investigated, step by step, the effects of polishing depths, speeds, abrasive sizes, and crystalline orientations on the wear mechanisms and material removal. The wear mechanisms of the sliding motion were adhering, ploughing, and cutting, depending on the depths. While the wear mechanisms of rolling motion are adhering and ploughing. Notably, in both stages of sliding and rolling, there is an existence of a critical point at 5.0 Å depth when we considered the deformation behaviors. Below that critical point, the GaN workpiece will present an elastic deformation. From the aforementioned point, the workpiece would be plastically deformed. Besides, from 10 Å depth, the dislocation began to appear and evolute simultaneously with the development of the maximum shear stress. The sliding motion on the Ga-face could remove a greater number of atoms than that of the N-face. Moreover, direction [1-100] on Ga-face requesting more forces to polish than direction [11-20]. In conclusion, the main achievements that contribute to the field can be summarized as follows: the atomistic wear mechanisms of sliding and rolling motions, material removal, and the role of rolling motion at the sub-nanoscale during the ultrafine flat polishing process.

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Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 65%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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“…Journal of Physics and Chemistry of Solids 103 (2017) [1][2][3][4][5] water volume ratios are shown in Fig. 1a-c.…”

Section: Zhangmentioning

confidence: 99%

“…The whole reaction can be summarized as Eq. (4): C 6 H 12 O 6 + 6SiO 2 + 12Mg → 6SiC + 6H 2 O + 12MgO (4) There are three points worth noting in the synthesis of quasimonodisperse β-SiC nanospheres. Firstly, besides reducing agents, Mg act as heating agents.…”

Section: Zhangmentioning

confidence: 99%

“…To meet the requirements of large scale applications in semiconductors, light-emitting diodes, solar cells and optical devices, the surface of wafers needs to be abraded as flat and low in defect as possible [1][2][3][4]. Chemical-mechanical polishing (CMP) is an effective planarization technique by the combination of chemical etching and abrasive polishing.…”

Section: Introductionmentioning

confidence: 99%

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Quasi-monodisperse β-SiC nanospheres: Synthesis and application in chemical-mechanical polishing

Zhang

2017

Journal of Physics and Chemistry of Solids

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“…Wang [13] develop a prediction model of material removal depth of the workpiece surface, and present an approach to achieve the material removal profile, which considered the influence of abrasive size, established a linear removal intensity model according to material removal amount, and the material removal depth was calculated by integrating the contact path. Zhong [14] conducted in-depth research on the chemical mechanical polishing (CMP) of optical silicon substrates, using two-body abrasion CMP to replace the traditional three body abrasion. Comparative experiments show that the MRR is largely dependent on head load and table speed would give the same effect, which can greatly improve the MRR efficiency.…”

mentioning

confidence: 99%

Modeling and analysis of the material removal rate for ultrasonic vibration–assisted polishing of optical glass BK7

Liang

Zhang

Chen

et al. 2021

Int J Adv Manuf Technol

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The emergence of ultrasonic vibration-assisted polishing technology has effectively improved the machining accuracy and efficiency of hard and brittle materials in modern optical industry, however, the material removal mechanism of ultrasonic vibration-assisted polishing (UVAP) still needs to be further revealed. This paper focuses on the material removal mechanism of ultrasonic vibration-assisted polishing of optical glass (BK7), the application of ultrasonic vibration to axial vibration and the atomization of polishing slurry, the material removal model was established. Based on the analysis of the relationship between the nominal distance d of the polishing pad and the actual contact area distribution, the prediction of the material removal profile is realized. In addition, the effects of different parameters on the material removal rate (MRR) were analyzed, including polishing force, spindle speed, abrasive particle size, ultrasonic amplitude, feed rate, and flow-rate of polishing slurry. Based on the motion equation of abrasive particles, the trajectory of abrasive particles in the polishing slurry was simulated, and the simulation results show that the introduction of the ultrasonic vibration field changes the motion state and trajectory of embedded and free abrasive particles. The new model can not only qualitatively analyze the influence of different process parameters on MRR, but also predict the material removal depth and MRR, providing a possibility for deterministic material removal and a theoretical basis for subsequent polishing of complex curved surfaces of optical glass. 1.IntroductionOptical glass (BK7) is widely used in optoelectronics, diffractive optical elements, biomedicine and other fields because of its excellent mechanical properties

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Chemical Mechanical Polishing (CMP) Processes for Manufacturing Optical Silicon Substrates with Shortened Polishing Time

Cited by 19 publications

References 19 publications

Atomistic wear mechanisms and deformation evolution in polishing

Atomistic wear mechanisms and deformation evolution in polishing

Quasi-monodisperse β-SiC nanospheres: Synthesis and application in chemical-mechanical polishing

Modeling and analysis of the material removal rate for ultrasonic vibration–assisted polishing of optical glass BK7

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