Chemical Mechanical Polishing of Glass Disk Substrates: Preliminary Experimental Investigation

In this work, the effects of different process parameters on the material removal rate (MRR) of phosphate laser glass during ring polishing had been investigated. Experiments were performed on a ring polishing machine that had a pad diameter of 4.4 m, and the MRR was obtained by the measurements of depth reduction of a groove on phosphate glass sample. The experimental results and analyses showed that size of the abrasive particles and the ceria concentration had significant effects on the polishing rate. The MRR of glass being polished on the annular-grooved pad was almost three times as when polished on the square-grooved pad. When the pad was periodically cleaned with water and glass was polished with fresh slurry, the value of MRR tended to be constant. Based on the experimental results, a combined process was designed to optimize MRR. The results of this study provided the essential foundation for obtaining the required MRR and optimizing the fabrication technique.

Section: Introductionmentioning

confidence: 99%

Factor Effect on Material Removal Rate During Phosphate Laser Glass Polishing

Chen

Yao

Yang

et al. 2014

“…CMP [5][6][7][8] is currently used for fabricating micro-electromechanical systems and integrated circuits in the semiconductor industry [9] to achieve both local and global planarization. Fabrication for silicon wafers comprises of steps, at which layers of materials such as insulating oxide are deposited, followed by planarization [10].…”

Section: Please Scroll Down For Articlementioning

confidence: 99%

Chemical Mechanical Polishing (CMP) Processes for Manufacturing Optical Silicon Substrates with Shortened Polishing Time

Zhong

Tian

et al. 2014

Self Cite

Silicon substrates are used in optical components for infrared systems and mirror systems. An alternative to processing of optical silicon substrates is chemical mechanical polishing (CMP). The conventional CMP uses a three-body abrasion. In this work, a two-body abrasion CMP, called the fixed abrasive CMP, is performed on silicon substrates. Experiments are performed and results show that the material removal rate (MRR) is largely dependent on head load. Similarly, an increase in table speed would give the same effect. Compared to the conventional CMP, MRRs for the fixed abrasive CMP process are much higher. This high processing efficiency would drastically reduce the time for polishing of silicon substrates. It has been confirmed that the total polishing time can be shortened to a few minutes from hours.

“…Therefore, the polishing technology of CVD diamond film has become one of the key technologies in precision finishing technology [4]. There are many existing diamond polishing methods such as mechanical polishing [5], chemical-mechanical polishing [6], ion beam polishing [7], electrochemical mechanical polishing [8], etc. All these methods have their own disadvantages and limitations.…”

Section: Please Scroll Down For Articlementioning

confidence: 99%

Processing and Mechanism of Dynamic Friction Polishing Diamond Using Manganese-Based Alloy

Shi

Jin

Zhong

et al. 2014

Chemical vapor deposition (CVD) diamond film has high heat resistance, high thermal stability, and other excellent properties as nature single-crystalline diamond. The surface polishing, large size planarization, and high material removal rate of CVD diamond film are limited due to its special crystal structure and excellent physicochemical characteristics. Dynamic friction polishing (DFP) technology is a new and effective polishing method of diamond. In this paper, according to the theory of graphitization of diamond catalyzed by unpaired d electrons, two manganese-based alloys, Mn-Cu and Mn-Ni, are selected as polishing materials to achieve high quality and high efficiency polishing of diamond and verify the mechanism of DFP. Alloying polishing plates were prepared by mechanical alloying method and spark plasma sintering technology. The polishing results of Mn-Cu and Mn-Ni alloys were compared and analyzed through DFP experiments. The experimental results showed that since Mn-Ni alloy has more unpaired d electrons than Mn-Cu alloy, Mn-Ni alloy was more likely to form vacant rails and showed a higher material removal rate of CVD diamond film. The addition of Cu decreased the wear of polishing plate with the help of its lubrication action.