Chemical mechanical polishing of hard disk substrate with α-alumina-g-polystyrene sulfonic acid composite abrasive

Lei, Hong; Bu, Naijing; Chen, Ruling; Hao, Ping; Neng, Sima; Tu, Xifu; Yuen, Kwok

doi:10.1016/j.tsf.2010.01.003

Cited by 35 publications

(16 citation statements)

References 21 publications

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“…Another issue with phosphate laser glass was that processing of large-aperture glass was difficult and time consuming. The difficulty in glass substrate fabrication and polishing arouse from increasingly stringent machining efficiency and surface quality [11,12]. Compared to traditional polishers, large ring polishing machines had larger polishing pad, which resulted in lower angular velocity but higher linear velocity.…”

Section: Introductionmentioning

confidence: 99%

Factor Effect on Material Removal Rate During Phosphate Laser Glass Polishing

Chen

Yao

Yang

et al. 2014

Materials and Manufacturing Processes

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In this work, the effects of different process parameters on the material removal rate (MRR) of phosphate laser glass during ring polishing had been investigated. Experiments were performed on a ring polishing machine that had a pad diameter of 4.4 m, and the MRR was obtained by the measurements of depth reduction of a groove on phosphate glass sample. The experimental results and analyses showed that size of the abrasive particles and the ceria concentration had significant effects on the polishing rate. The MRR of glass being polished on the annular-grooved pad was almost three times as when polished on the square-grooved pad. When the pad was periodically cleaned with water and glass was polished with fresh slurry, the value of MRR tended to be constant. Based on the experimental results, a combined process was designed to optimize MRR. The results of this study provided the essential foundation for obtaining the required MRR and optimizing the fabrication technique.

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Section: Introductionmentioning

confidence: 99%

Factor Effect on Material Removal Rate During Phosphate Laser Glass Polishing

Chen

Yao

Yang

et al. 2014

Materials and Manufacturing Processes

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“…7,8 In CMP of silicon or silica, various oxidizing agents have been applied to accelerate oxidation reaction to enhance the material removal rate (MRR), such as K 2 Cr 2 O 7 , NaOH, tetramethylammonium hydroxide (TMAH) and H 2 O 2 , etc. 9-12 Among these oxidants, hydrogen peroxide is preferable owning to the no metal components and no toxic decomposition products to the environment.…”

Section: Introductionmentioning

confidence: 99%

Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing

Wang¹,

Chen²,

Zhao

2015

Int. J. Precis. Eng. Manuf.

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In order to eliminate the disposal issues of toxic chemicals in chemical mechanical planarization, a water-based ultra-polishing experiment with alumina abrasives was investigated for silicon wafer based on Box-behnken theory. It was found that the material removal rate (MRR) was sensitive to pH value, more sensitive to the slurry flow rate, and most sensitive to the oxidizer concentration. Under the optimal conditions of oxidizer concentration (0.44%), slurry flow rate (71.86 mL/min), and natural pH (pH: 7), the highest MRR was derived. Finally, a confuse-understanding of pH on material removal was addressed as well. It was pointed out that the increase in pH leads to the initial decrease in MRR, followed by a rapid increase as pH exceeds 11.

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“…For example, the physical size of hard drives continues to decrease, while the memory capacity of computer hard drives has increased rapidly, meaning that the head-disk spacing has become narrower. It is believed that a flying height as small as 2.5-3.5 nm is necessary for an areal recording density of 1 Tbit/in 2 , which is the next target in industry [3]. In this case, there is a need to satisfy significantly higher requirements for the machining accuracy and the surface quality of the heads and hard disk substrates.…”

Section: Introductionmentioning

confidence: 99%

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

Zhang

Lei

2013

Friction

Self Cite

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Abstract:The effect of tert-butyl hydroperoxide-sodium pyrosulfite ((CH 3 ) 3 COOH-Na 2 S 2 O 5 ) as an initiator system in H 2 O 2 -based slurry was investigated for the abrasive-free polishing (AFP) of a hard disk substrate. The polishing results show that the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry exhibits a material removal rate (MRR) that is nearly 5 times higher than that of the H 2 O 2 slurry in the AFP of the hard disk substrate. In addition, the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H 2 O 2 slurry. Further, we investigate the polishing mechanism of H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry. Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry is much greater than that of the H 2 O 2 slurry. The results of potentiodynamic polarization measurements show that the hard disk substrate in the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry can be rapidly etched, and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry may be loose, and can be removed easily during polishing. The better oxidizing and etching ability of H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry leads to a higher MRR in AFP for hard disk substrates.

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Chemical mechanical polishing of hard disk substrate with α-alumina-g-polystyrene sulfonic acid composite abrasive

Cited by 35 publications

References 21 publications

Factor Effect on Material Removal Rate During Phosphate Laser Glass Polishing

Factor Effect on Material Removal Rate During Phosphate Laser Glass Polishing

Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

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