Chemical non-uniformity of thin dielectric films produced by ammonolysis of monosilane

Belyĭ, V. I.; Kuznetsov, F.A.; Smirnova, T. P.; Chramova, L.V.; Kravchenko, L.Kh.

doi:10.1016/0040-6090(76)90169-3

Cited by 14 publications

(2 citation statements)

References 5 publications

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“…The main features of silicon nitride as a pH-sensitive material are related to the presence of hydrogen in the film, its content depending on deposition conditions and resulting in the variation of pH sensitivity [69,70,71]. It is known that silicon nitride contains a certain amount of hydrogen in its bulk in the form of Si-H and Si-NH groups [72,73]. Ammonia and silane, which are used as reagents during silicon nitride deposition, are the sources of hydrogen incorporated in the film.…”

Section: Silicon Nitride Filmsmentioning

confidence: 99%

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Vlasov

Tarantov

Bobrov

2003

Analytical and Bioanalytical Chemistry

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Recent trends in research and development of electrolyte-insulator-semiconductor (EIS) field-effect chemical sensors (ion-selective field-effect transistors, light-addressable potentiometric sensors, capacitive EIS-sensors) with inorganic gate insulators (oxide, nitride and chalcogenide films) are reviewed. Physical properties of EIS systems and basic mechanisms of their chemical sensitivity are examined. Analytical characteristics and sensing mechanisms of EIS pH sensors with oxide and nitride films, as well as metal ions sensors with chalcogenide films, are critically discussed. Prospects of future research on EIS field-effect biosensors are briefly outlined.

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Section: Silicon Nitride Filmsmentioning

confidence: 99%

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Vlasov

Tarantov

Bobrov

2003

Analytical and Bioanalytical Chemistry

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“…On the other hand Neugebauer [6] and Kasprzak [7] have concluded on the base of their measurements, that the memory window decay rate of MNOS memory devices is connected with the depth distribution of charges in the Si3N4 films. Bélyi et al [1] have demonstrated the influence of the composition of the ambient gas on decomposition of N-H groups during annealing at 1000 °C.…”

mentioning

confidence: 99%

Distribution and role of N—H and Si—H bonds in mnos structures

Stubnya

Szép

Hoffmann

et al. 1978

Rev. Phys. Appl. (Paris)

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Study of thin silicon nitride films toy isothermal depolarization of mnos structures

Ефимов

1981

Phys. Stat. Sol. (a)

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Electrophysical properties of thin films of silicon nitride obtained by various techniques are investigated by the method of isothermal depolarization of MNOS structures. For Si3N4 grown in a hydrogen flow the obtained estimate of trap depth amounts to 1.6 to 2 eV, for Si3N4 obtained in a low‐pressure reactor about 1.2 eV. It is shown that the difference in electron spectra of these samples may be due to the strong influence of hydrogen on the trap spectrum in Si3N4. A direct comparison of the method of isothermal depolarization and the conduction method is made to estimate the parameters of electrical conductance of silicon nitride layers.

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Chemical non-uniformity of thin dielectric films produced by ammonolysis of monosilane

Cited by 14 publications

References 5 publications

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Distribution and role of N—H and Si—H bonds in mnos structures

Study of thin silicon nitride films toy isothermal depolarization of mnos structures

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