Distribution and role of N—H and Si—H bonds in mnos structures

Stubnya, G.; Szép, I.C.; Hoffmann, G.; Horváth, Z.E.; Tüttö, P.

doi:10.1051/rphysap:019780013012067900

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Study of thin silicon nitride films toy isothermal depolarization of mnos structures

Ефимов

1981

Phys. Stat. Sol. (a)

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Electrophysical properties of thin films of silicon nitride obtained by various techniques are investigated by the method of isothermal depolarization of MNOS structures. For Si3N4 grown in a hydrogen flow the obtained estimate of trap depth amounts to 1.6 to 2 eV, for Si3N4 obtained in a low‐pressure reactor about 1.2 eV. It is shown that the difference in electron spectra of these samples may be due to the strong influence of hydrogen on the trap spectrum in Si3N4. A direct comparison of the method of isothermal depolarization and the conduction method is made to estimate the parameters of electrical conductance of silicon nitride layers.

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