The mechanism of N-H bond decomposition in silicon nitride films

Smirnova, T. P.; Belyĭ, V. I.; Chramova, L.V.

doi:10.1016/0040-6090(80)90092-9

Cited by 11 publications

(1 citation statement)

References 9 publications

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“…On the other hand, it is very difficult to sinter Si 3 N 4 to full density owing to its high degree of covalent bonding. As a consequence, several alternative techniques, such as partial liquid phase sintering with additives, hot isostatic pressing, and spark plasma sintering have been developed to improve the densification of Si 3 N 4 -based ceramics [1,[7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Morphology control of a silicon nitride thick film derived from polysilazane precursor using UV curing and IR heat treatment

Park

Joo

Chung³

et al. 2017

Advances in Applied Ceramics

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Silicon nitride (Si 3 N 4 ) has excellent thermo-mechanical properties, and can be used as heat dissipation substrate for various devices. Si 3 N 4 thin films are generally synthesised by chemical vapour deposition (CVD) or plasma-enhanced CVD. The use of polysilazanes (PSZs) as a precursor to the synthesis of Si 3 N 4 has attracted significant attention because of their high mouldability and processability. In this study, Si 3 N 4 thick films were prepared on silicon wafers or aluminium substrates by a spin-or dip-coating liquid PSZ, followed by UV curing and IR heat treatment under various conditions. The effects of the heat treatment conditions on the Si 3 N 4 thick film surface were analysed by optical microscopy, X-ray diffraction, and scanning electron microscopy. An almost single phase of Si 3 N 4 was synthesised successfully on the single crystalline silicon with UV curing at 400°C for 30 min and IR heating at 800°C in N 2 atmosphere.

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Section: Introductionmentioning

confidence: 99%