Post-deposition high temperature processing of silicon nitride

Stein, H. J.; Peercy, P. S.; Sokel, R. J.

doi:10.1016/0040-6090(83)90096-2

Cited by 37 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the diffusion coefficient of H 2 in Si 3 N 4 at 700 C was reported 50 to be only $10 À17 cm 2 s À1 , which is equivalent to a diffusion length of only 4 nm. Efficient H 2 diffusion through Si 3 N 4 requires temperatures in excess of 900 C. 51 Given the equilibrium nature of thermal H 2 passivation, it is unlikely that at this high temperature, the DB-H reaction still dominates over the opposing dissociation reaction. 48,49 Also, potential structural changes due to hydrogen acting as reducing agent are of concern.…”

Section: A Band Tail Luminescence Vs Radiative Si 3 N 4 Defectsmentioning

confidence: 99%

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Hiller¹,

Zelenina²,

Gutsch³

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si 3 N 4 . Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10 5 times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si 3 N 4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si 3 N 4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si 3 N 4 interface defect literature. In addition, the role of Si 3 N 4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si 3 N 4 -embedded Si NCs are suggested. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

Section: A Band Tail Luminescence Vs Radiative Si 3 N 4 Defectsmentioning

confidence: 99%

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Hiller¹,

Zelenina²,

Gutsch³

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…We believe that the nitrogen-containing groups are particularly good binding sites for ͑C 2 H 5 ͒ 3 B based on a study in which WN x C y was deposited on nitrogen-containing polymer films. 11 However, the Si 3 N 4 surface is complex because it contains hydrogen incorporated in both N-H and Si-H bonds to concentrations of 2-10 atom%, [30][31][32] and oxygen in Si-OH bonds. 33,34 Some SiO 2 on top of the Si 3 N 4 wafer can be detected by XPS.…”

Section: Resultsmentioning

confidence: 99%

Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WN[sub x]C[sub y] Films

Hoyas

Whelan

Schuhmacher

et al. 2006

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

“…22 Annealing to 900°C of hydrogen-depleted film in H 2 ambient reintroduced hydrogen into the film to reform Si-H and N-H bonds. 8͒.…”

Section: Hydrogen Contentmentioning

confidence: 99%

Chemical bonding and interdiffusion in scaled down SiO2∕Si3N4∕SiO2 stacks with top oxide formed by thermal ed copyoxidation

Saraf¹,

Edrei²,

Akhvlediani³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inWet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks Appl. Phys. Lett. 90, 263513 (2007); 10.1063/1.2752769 Effect of oxidation on the chemical bonding structure of PECVD SiN x thin films Hafnium interdiffusion studies from hafnium silicate into siliconThe influence of thermal oxidation on the composition of silicon nitride films in SiO 2 /Si 3 N 4 / SiO 2 stacks for advanced nonvolatile memories is reported. X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses lead to the conclusion that wet thermal ͑pyrogenic͒ oxidation of silicon nitride enhances the incorporation of oxygen into the silicon nitride layer and creates a silicon oxynitride layer. In the oxynitride layer formed by wet oxidation, O is mostly bonded to N, whereas in the native oxynitride at the silicon nitride surface, O is preferentially bonded to Si. Dry oxidation ͑1200°C͒ results in an even higher amount of oxygen incorporation into the silicon nitride layer as compared with the pyrogenic process. After both pyrogenic and dry oxidation, hydrogen concentration decreases in the bulk of the silicon nitride layer. Following wet oxidation, hydrogen was found to accumulate at the surface layers of the grown oxynitride film. Oxygen penetration into the nitride layer was found to be higher in thinner nitride layers. The peculiarities of hydrogen distribution were not affected by the thickness of the nitride layer.

show abstract

Post-deposition high temperature processing of silicon nitride

Cited by 37 publications

References 6 publications

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WN[sub x]C[sub y] Films

Chemical bonding and interdiffusion in scaled down SiO2∕Si3N4∕SiO2 stacks with top oxide formed by thermal ed copyoxidation

Contact Info

Product

Resources

About