Chemical vapor deposition and characterization of high-k BaHf1−xTixO3 dielectric layers for microelectronic applications

Abstract

Articles you may be interested inDouble-sided reel-to-reel metal-organic chemical vapor deposition system of YBa2Cu3O7-δ thin films Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO 3 films grown by metalorganic chemical vapor deposition

High- k perovskite gate oxide for modulation beyond 10 14 cm −2

“…By alloying these two materials, one may achieve both the high dielectric constant of BTO and the high dielectric strength of BHO. There have been a few reports that investigated BaHf 1−x Ti x O 3 system, but no detailed dielectric properties were reported (28)(29)(30)(31)(32). Here, we report a high-k material with superior dielectric properties: large dielectric constant (~150) and high breakdown field (~5 MV cm −1 ) with low leakage current (~10 −4 A cm −2 at 2 MV cm −1 ).…”

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

“…For this type of applications, there has been a vast variety of high-k perovskite oxide thin films developed, including CaCu 3 Ti 4 O 12 , [108] (Ba,Sr)TiO 3 (BST), [109] (Pb,La)TiO 3 (PLT), [110][111][112][113] LaAlO 3 , [114] CeAlO 3 , [115] BaHfO 3 , [116] and BaHfTiO 3 . [117] Thin films of ferroelectric perovskite-based oxides such as BaTiO 3 , [52] PbTiO 3 , [118] PZT, [118] Pb(Mg 1/3 Nb 2/3 )O 3 (PMN), [119] (Pb 1−x La x )TiO 3 (PLT), [113,120] SrTiO 3 , [121,122] KNbO 3 , [123,124] SrBi 2 Ta 2 O 9 (SBT), [125] and (K x Na 1−x )NbO 3 (KNN) [126] have been successfully deposited on a variety of substrates, including Pt(111)/SiO 2 /Si, Pt(100)/MgO(100), Pt/Ti/SiO 2 /Si multilayers or simple (100)-Silicon wafers.…”