Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal

Grudinkin, S. A.; Феоктистов, Н. А.; Bogdanov, K. V.; Baranov, M. A.; Баранов, А. В.; Fedorov, Anatoly V.; Голубев, В. Г.

doi:10.1134/s1063782614020109

Cited by 15 publications

(10 citation statements)

References 36 publications

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“…It is known that the ZPL of the SiV center in diamond films and particles has a high intensity, regardless of the methods of gas-phase synthesis used, silicon doping methods and substrate materials [32][33][34][35]. This is due to the smaller size of the Si atom compared to the Ge atom, as a result of which it is more efficiently embedded in the diamond lattice to form an optically active center and is present in CVD diamond structures even at low content in the gas phase.…”

Section: Resultsmentioning

confidence: 99%

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Grudinkin

Феоктистов

Bogdanov

et al. 2022

Physics of the Solid State

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The effect of doping with boron on the luminescent properties of diamond particles synthesized by Hot Filament Chemical Vapor Deposition technique with color centers embedded during the growth process has been studied. It is shown that at low boron doping level, the photoluminescence intensity of a narrow zero-phonon line of the silicon-vacancy color center (738.2 nm) demonstrates a strong dependence on the concentration of boron atoms at the sites of the diamond lattice. The dependence of the intensity of a broad photoluminescence band in the wavelength range 520-800 nm on the concentration of boron atoms in the gas mixture in the range from 14 to 64000 ppm has been analyzed. The Raman scattering spectra of the obtained particles have been studied. At the concentration of boron atoms in the gas mixture up to 1540 ppm, the Raman scattering spectra of diamond particles practically do not change when the boron concentration is varied. At high boron doping level, the diamond band in the Raman spectra exhibit a spectral response typical of the Fano resonance. Keywords: diamond particles, color centers, boron doping, photoluminescence, chemical vapor deposition.

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Section: Resultsmentioning

confidence: 99%

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Grudinkin

Феоктистов

Bogdanov

et al. 2022

Physics of the Solid State

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“…The broadband luminescence peaking at ≈ 600 nm is attributed to structural defects connected with the presence of amorphous sp 2 hybridized carbon [27,28]. For the Mo substrate, the broadband luminescence is well pronounced and the most intensive relative to ZPL one (2.5 for intensity ratio and 0.15 for integral intensity ratio).…”

Section: Photoluminescencementioning

confidence: 91%

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

Dragounová

Ižák

Kromka

et al. 2017

Journal of Electrical Engineering

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Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al 2 O 3 , Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed ( ≈ 3.5 cm −1 ) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.K e y w o r d s: diamond, Si-V centre, photoluminescence, microwave-plasma enhanced CVD, activation energy

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“…The SiV − and GeV − centers have a very similar electronic level structure with D 3d symmetry [ 12 ]. Both negatively charged silicon-vacancy (SiV − ) and germanium-vacancy (GeV − ) centers can be formed with several techniques: ion implantation [ 13 , 14 ], shock wave synthesis, and doping during HPHT [ 15 , 16 ] and chemical vapor deposition (CVD) growth [ 17 , 18 , 19 , 20 ]. Among these methods, the CVD approaches look most attractive, since the ion implantation often results in lattice damage, causing strains and the degradation of optical properties.…”

Section: Introductionmentioning

confidence: 99%

Duo Emission of CVD Nanodiamonds Doped by SiV and GeV Color Centers: Effects of Growth Conditions

et al. 2022

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The investigation of the hot filament chemical vapor deposition nanodiamonds with simultaneously embedded luminescent GeV− and SiV− color centers from solid sources showed that both the absolute and relative intensities of their zero-phonon lines (at 602 and 738 nm) depend on nanodiamond growth conditions (a methane concentration in the CH4/H2 gas mixture, growth temperature, and time). It is shown that a controlled choice of parameters of hot filament chemical vapor deposition synthesis makes it possible to select the optimal synthesis conditions for tailoring bicolor fluorescence nanodiamond labels for imaging biological systems.

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Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal

Cited by 15 publications

References 36 publications

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

Duo Emission of CVD Nanodiamonds Doped by SiV and GeV Color Centers: Effects of Growth Conditions

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