Chemical Vapor Deposition of Metallic Thin Films Using Homonuclear and Heteronuclear Metal Carbonyls

Boyd, E. P.; Ketchum, Douglas R.; Deng, Haibin; Shore, Sheldon G.

doi:10.1021/cm9605330

Cited by 70 publications

(52 citation statements)

References 18 publications

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“…When the precursor is introduced in the chamber, pressure experiences some instability; at this stage (1-2 min) film deposition starts, although growth parameters are not easily controlled, and after the pressure reaches its equilibrium value of 5÷8 x 10 -3 mbar, which remains constant throughout the film growth. By using the same Fe 3 (CO) 12 precursor, but working at ∼10 -5 mbar (at 200°C) in a vertical-geometry CVD apparatus, Boyd et al were able to deposit pure Fe films [18], suggesting that the deposition pressure plays a key-role in governing the composition of the films. At our experimental conditions, the formation of …”

Section: Cvd Growth Of Fe 3 O 4 and Synthesis Of Fe 3 O 4 /Mgo/co Trimentioning

confidence: 99%

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Mantovan¹,

Lamperti²,

Georgieva³

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract. Magnetite (Fe 3 O 4 ) is predicted to be half metallic at room temperature and it shows the highest Curie temperature among oxides. The use of Fe 3 O 4 thin films is therefore promising for spintronic devices such as magnetic tunnel junctions and magnetoresistive sensors. The structural, magnetic, and magnetotransport properties of magnetite are reported to be strongly dependent on the growth conditions. We have developed a very simple deposition chamber for growing thin magnetite films via a chemical vapor deposition process based on the Fe 3 (CO) 12 carbonyl precursor. The structural, morphological and magnetic properties of the as deposited Fe 3 O 4 films have been investigated by means of time of flight secondary ion mass spectrometry, grazing incidence X-ray diffraction, X-ray reflectivity, atomic force microscopy, conversion electron Mössbauer spectroscopy, and superconducting quantum interference device magnetometry. Magnetotransport measurements show magnetoresistance up to -2.4% at room temperature at the maximum applied field of 1.1 T.Resistivity measurements in the 100-300 K temperature range reveal that the magnetotransport properties of the Fe 3 O 4 films are governed by inter-granular tunneling of the spin polarized electrons.The spin polarization is estimated to be around -16%. A possible route for increasing the spinpolarized performances of our magnetite films is proposed. We have also deposited Fe 3 O 4 /MgO/Co stacks by using a combined chemical vapor-and atomic layer-deposition process. The trilayer's hysteresis curve evidences the presence of two distinct switching fields making it promising for magnetite-based magnetic tunnel junction applications.

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Section: Cvd Growth Of Fe 3 O 4 and Synthesis Of Fe 3 O 4 /Mgo/co Trimentioning

confidence: 99%

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Mantovan¹,

Lamperti²,

Georgieva³

et al. 2010

J. Phys. D: Appl. Phys.

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“…[1][2][3] At present, epitaxial growth of group III nitrides is primarily accomplished using either metal organic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). Further improvement in performance of devices based on the group III nitrides will largely rely on advances in the epitaxial growth technologies for better quality materials.…”

Section: Suppression Of Thermal Convection and Its Effect On Growth Omentioning

confidence: 99%

“…With the discovery of giant magnetoresistance (GMR) in magnetic multilayer structures [1] and "granular" alloys, [2,3] there has been a significant increase in work on the deposition of thin films of both magnetic and non-magnetic metals. The specific combination of copper/cobalt in GMR structures, either in multilayer form [4,5] or as a granular alloy, [3,6] has attracted tremendous interest.…”

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confidence: 99%

Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

Lane¹,

Oliver²,

Wright³

et al. 1998

Chem. Vap. Deposition

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“…[1,2] Oxides can also be produced from metal carbonyls by conducting the pyrolyses in air. A recent example includes the formation of tetrahedral nanocrystals of CoO from Co 2 (CO) 8 .…”

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confidence: 99%

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confidence: 99%

Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

Crawford¹,

Knutsen²,

Yang³

et al. 1998

Chem. Vap. Deposition

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Thermolysis of metal carbonyls of the late transition elements has long been known to produce pure metals, a reaction used in metallurgical processing of nickel and the CVD of films of nickel, cobalt, iron, and some alloys. [1,2] Oxides can also be produced from metal carbonyls by conducting the pyrolyses in air. A recent example includes the formation of tetrahedral nanocrystals of CoO from Co 2 (CO) 8 .[3] We report in this paper that substitution of one nitrosyl ligand into the coordination sphere of the cobalt carbonyl completely alters the course of the reaction and the nature of the product. The new solid-state product, CoN x O 1-x , exhibits electrical conductivity many orders of magnitude greater than pure CoO. Due to the thermal sensitivity of the solid-state product, its synthesis is limited to a low-temperature reaction such as described here. Nanocrystalline particles having a coherence length of 14 nm were prepared by passing Co(CO) 3 (NO) (P Co(CO) 3 (NO) = 20 torr) into a vertically oriented hot-wall reactor heated to 350°C. The orange color of the gas mixture at the entrance of the reactor quickly dissipated and was replaced by an aerosol of ultrafine particles that was collected on a medium-porosity glass frit at the end of the reactor. In a typical experiment 1.50 g of Co(CO) 3 (NO) was converted into 0.25 g (40 % yield) of a black powder at a reactor temperature of 300°C over a period of 3-5 min. Deposition on the reactor wall and unreacted precursor (observed in the liquid-nitrogen-cooled trap) account for the moderate yield. If a carrier gas (Ar or N 2 ) was used, its mass flow rate ranged from 0 to 300 sccm, and the residence time within the reactor was of the order of tens of seconds. All references to temperature correspond to the maximum value at the center (in length) along the reactor. When this value was 300°C, the temperatures at the entrance and exits were 70 and 250°C, respectively.Thin films of the oxonitride were deposited using a stainless steel cold wall reactor described in detail elsewhere. [4] Use of the cold wall reactor minimized gas-phase reactions, however, we also found it necessary to reduce the concentration of the Co(CO) 3 (NO) in the gas phase by cooling the precursor vessel. The equilibrium vapor pressure, measured between -13 and 17°C in a closed system with a capacitance manometer, obeyed the equation ln P = 23.3 -(5480/T), where P is in torr and T in kelvin. The precursor was cooled to -23°C during most depositions, and the total pressure was maintained at 3 torr using an argon flow rate of 14 sccm. Smooth films exhibited the same composition and diffraction patterns as found in the nanoparticles isolated from the aerosol process.All reflections in the X-ray powder diffraction pattern ( Fig. 1) for particles prepared between 200 and 400°C were indexed to a cubic lattice with a = 4.415 Å, a value approximately 40 % between that of the metastable zinc blende phases of CoO (4.544 Å) [5,6] and CoN (4.28 Å). [7] The stable rock salt phase of CoO has a lattice constant...

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Chemical Vapor Deposition of Metallic Thin Films Using Homonuclear and Heteronuclear Metal Carbonyls

Cited by 70 publications

References 18 publications

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

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