Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

Lane, P.A.; Oliver, P.E.; Wright, P.J.; Reeves, Christopher L.; Pitt, A. D.; Cockayne, B.

doi:10.1002/(sici)1521-3862(199810)04:05<183::aid-cvde183>3.0.co;2-m

Cited by 41 publications

(33 citation statements)

References 14 publications

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“…The activation energy is estimated to be 63.1 ± 1.2 kJ/mol on silicon substrates, which is in accordance with a previous report on thermal oxide substrates. [28][29] To demonstrate the step coverage of our DLE-CVD Co films, we developed a parallel trench structure with an ultrahigh aspect ratio as a test platform. The fabrication of this trench structure is described in the experiments section, as well as schematically illustrated in Figure S3 in the supporting information.…”

Section: Resultsmentioning

confidence: 99%

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Feng

Gong

Lou

et al. 2017

ACS Appl. Mater. Interfaces

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In advanced microelectronics, precise design of liner and capping layers becomes critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline and highly conformal Co films with highly controllable growth characteristics. This process allows full Co 2 encapsulation of nanoscale Cu interconnects, thus stabilizing Cu against diffusion and electromigration. Electrical measurements and high-resolution elemental imaging studies show that the DLE-CVD Co encapsulation layer can improve the reliability and thermal stability of Cu interconnects. Also, with the high conductivity of Co, the DLE-CVD Co encapsulation layer can potentially further decrease the power consumption of nanoscale Cu interconnects, paving the way for Cu interconnects with higher efficiency in future high-end microelectronics.

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Section: Resultsmentioning

confidence: 99%

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Feng

Gong

Lou

et al. 2017

ACS Appl. Mater. Interfaces

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“…Bulk resistivity values were found to be in the range of 62.1−12.5 μΩ cm, the lower of which approaches the value for bulk cobalt 5.6 μΩ cm (at 0°C). 58 Films deposited at 375°C displayed the lowest resistivity value, which may be rationalized by the high crystallinity and thickness of the film (vide infra). Resistivity values of thin films can be increased by a number of effects, including increasing surface roughness, a higher degree of scattering at grain boundaries and with decreasing film thickness, electron scattering at a films surface increases.…”

Section: Inorganic Chemistrymentioning

confidence: 99%

Cobalt(I) Olefin Complexes: Precursors for Metal–Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films

et al. 2016

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We report the synthesis and characterization of a family of organometallic cobalt(I) metal precursors based around cyclopentadienyl and diene ligands. The molecular structures of the complexes cyclopentadienyl-cobalt(I) diolefin complexes are described, as determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis and thermal stability studies of the complexes highlighted the isoprene, dimethyl butadiene, and cyclohexadiene derivatives [(C5H5)Co(η(4)-CH2CHC(Me)CH2)] (1), [(C5H5)Co(η(4)-CH2C(Me)C(Me)CH2)] (2), and [(C5H5)Co(η(4)-C6H8)] (4) as possible cobalt metal organic chemical vapor deposition (MOCVD) precursors. Atmospheric pressure MOCVD was employed using precursor 1, to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface.

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“…Generally, [Co 2 (CO) 8 ] [20,21,[23][24][25][26], [Co(η 5 -C 5 H 5 ) 2 ] [23], [Co(acac) 2 ] [27,28] and [Co( t BuNC(Me)NEt) 2 ] [29] are used for layer generation but those systems suffer from being, for example, toxic and are not easy to process as they are solid materials. However, liquid precursor systems such as [Co(η 5 -C 5 H 5 )(CO) 2 ] [21,23] and [Co(CO) 3 (NO)] [30][31][32][33] require high substrate temperatures (360-480°C) [32,34,35] or the addition of reactive gases [30][31][32][33]36] or plasma [37,38] to ensure the formation of uniform cobalt layers.…”

Section: Introductionmentioning

confidence: 99%

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

et al. 2015

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Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

Cited by 41 publications

References 14 publications

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Cobalt(I) Olefin Complexes: Precursors for Metal–Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

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