Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3 disilacyclobutane

Abstract

Silicon carbide (SiC) thin films were deposited on titanium carbide (TiC) substrates by pyrolysis of 1,3 disilacyclobutane (C2H8Si2), at atmospheric pressure, in an inverted-vertical cold-wall chemical vapor deposition reactor. The growth rate, morphology, and crystallinity of the films were studied, at constant C2H8Si2 flow rate, as a function of substrate temperature (810 °C≤Ts≤1285 °C). The growth rate increased with increasing Ts. Film morphologies were dependent on Ts and slight differences in TiC substrate orientation at Ts≥1015 °C. A smooth, soft as-grown morphology was obtained at 810 °C. Hard, rough as-grown surfaces were obtained at Ts≥1066 °C. Films grown at Ts ≥1066 °C contained a SiC primary phase and a Si-rich second phase. Epitaxial growth of β-SiC was obtained only at 1210 °C.

Theoretical Study on the Ring-Opening of 1,3-Disilacyclobutane and H2 Elimination

“…3−9 Among all silacyclobutane molecules, 1,3-disilacyclobutane (1,3-DSCB) has a unique structure with a built-in 1:1 Si/C ratio. It has been used in producing silicon carbide 3,10,11 and organosilicon polymers 12,13 via either thermal or laser CVD.…”

Low Temperature Coating Deriving from Metal-Organic Precursors

“…Larkin et al 126 and Chadder et al 127 have used this precursor to get stoichiometric SiC, but this precursor needs relatively high temperature to grow SiC film and it has tedious synthesis route. Larkin et al 126 and Chadder et al 127 have used this precursor to get stoichiometric SiC, but this precursor needs relatively high temperature to grow SiC film and it has tedious synthesis route.…”

Gas-phase reaction kinetics of 1,3-disilacyclobutane in a hot-wire chemical vapor deposition reactor

“…Hot-wire chemical vapor deposition (HWCVD) has emerged as a well-versed technique that can deposit high-quality SiC thin films. 1,3-Disilacyclobutane (DSCB) is considered as a promising single-source precursor for SiC thin film materials using CVD methods [1][2][3] due to the built-in 1:1 Si:C stoichiometry that matches the one in SiC. Recently, we have investigated the decomposition chemistry of DSCB when it is used as a precursor gas in a HWCVD reactor [4].…”