Chemisorption of C60 on the Si(001)-2×1 surface at room temperature

Abstract

Articles you may be interested inInterfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A highresolution core-level photoemission studySimulations of C 28 chemisorption on diamond (001)-(2×1) surface: The comparison between cluster-cluster interaction and cluster-surface interaction Cesium-induced structural transformation from the Si(113)3 ×2 to the 3×1 surface A synchrotron-radiation photoemission study of C 60 deposited on a clean Si͑001͒-2 ϫ 1 surface at room temperature is presented. It is found that the C 60 molecules are chemisorbed on the Si͑001͒-2 ϫ 1 surface with a characteristic of the covalent bond. A Si-C 60 hybridization causes charge transfer from the Si substrate to the C 60 molecules. Consequently, induced surface components appear in the Si 2p and C 1s cores with opposite signs. To be specific for 1 monolayer coverage, two interface-induced Si 2p components are clearly resolved at the core-level shifts of +0.38 and +0.97 eV. For the C 1s cores, in addition to a C 60 -related peak at 284.50 eV, an induced peak shows up with a negative shift of −0.70 eV, suggesting that the carbon atoms hybridized with silicon surface atoms gain charge.

Interfacial electronic properties of the heterojunctions C60/rubrene/Au and rubrene/C60/Au

“…spectrum measured for the C 60 film with the HOMO, H F , located at $2.0 eV BE agrees well with the bulk fullerene spectrum. 8,9 Upon rubrene deposition, the HOMO of rubrene, H R , instantly appears as a small bulge at $1 eV BE. With increasing rubrene coverage, the rubrene-derived states increase in intensity at the expense of the C 60 -related states.…”

SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

“…A 125-mm hemispherical analyzer ͑OMICRON Vakuumphysik GmbH͒ in an UHV chamber with base pressure less than 2.5ϫ 10 −11 Torr collected the photoelectrons. 27 Upon annealing the 0.5-ML C 60 film, peak A shifted to lower binding energy by 0.1 eV, but at 600°C it reverted to the original position. A mirror-polished Si͑001͒ single crystal ͑ =1 −10 ⍀ cm, P͒ of n type was preoxidized according to the method of Ishizaka and Shiraki, 26 and annealed in a stepwise manner to 875°C in the photoemission chamber to remove the protective oxide layers.…”

“…In Fig. 27,33 This fit is shown in Fig. A broad line, D, at binding energy 283.8 eV is attributed to carbon atoms that bond covalently with the silicon atoms on the surface, the C-Si bond.…”

“…The temperature of the substrate was measured with an infrared pyrometer ͑emissivity setting 0.64͒. 27 As is discernible in Fig. All spectra are normalized with the mesh current.…”

Antiferromagnetic Ground State of a C60‐Covered Si(001) Surface

“…On the other hand, the PES [5,6] and STS [8,9] data of the C 60 /SiA C H T U N G T R E N N U N G (001) system showed that the surface states originating from Si dimers disappear near the Fermi level. For this, Sakamoto et al suggested that Si dimers participate in bonding to adsorbed C 60 , thereby resulting in the disappearance of surface states.…”