Chemoselective Photodeoxidization of Graphene Oxide Using Sterically Hindered Amines as Catalyst: Synthesis and Applications

Zhao, Fei; Liu, Juqing; Huang, Xiao; Zou, Xi; Lü, Gang; Sun, Pengju; Wu, Shixin; Ai, Wei; Yi, Moonsuk; Qi, Xiaoying; Xie, Linghai; Wang, Junling; Zhang, Hua; Huang, Wei

doi:10.1021/nn2047185

Cited by 84 publications

(76 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The formed GO film was crackless with some wrinkles (Fig. S6) like the common graphen-based film3651. The g-C 3 N 4 -NSs film was formed on GO layer through the sprayed fog of g-C 3 N 4 -NSs aqueous solution in virtue of a commercial humidifier (step 4).…”

Section: Resultsmentioning

confidence: 97%

“…For instance, some promising memory diodes based on graphene oxide (GO) film as the active insulator layer have been presented3435. However, the device reliability is an inevitable issue due to the unstability of active oxygen functional groups on GO3637. Meanwhile, GO layers have to be coupled with specific metal electrodes to achieve the rewritable function and enhance the ON/OFF ratio38.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Zhao

Cheng

et al. 2014

Sci Rep

Self Cite

106

View full text Add to dashboard Cite

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

show abstract

Section: Resultsmentioning

confidence: 97%

mentioning

confidence: 99%

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Zhao

Cheng

et al. 2014

Sci Rep

Self Cite

106

View full text Add to dashboard Cite

show abstract

“…Indeed, Bagri et al have studied theoretically and experimentally the reduction mechanism of chemically derived GO during annealing, and the results show that the -OH group desorbs at low temperature. 39 In addition, they observed that the >C]O oxygen functional group is more stable than the other oxygen have shown that GO can be selectively photoreduced by using sterically hindered amines as a catalyst, 43 indicating that the reduction mechanism of oxygen functional groups is dependent on the reaction environment. The reported results corroborate with our obtained results pertaining to the stability of the >C] O and C-O-C functional groups on the surface of rGO, even up to 400 C. It is also believed that the removal of -OH and -COOH oxygen functional groups is possible by photocatalytic reduction, as the reduction occurs through the transfer of electrons from the photocatalyst to these oxygen sites.…”

Section: Resultsmentioning

confidence: 99%

Capsule-embedded reduced graphene oxide: synthesis, mechanism and electrical properties

et al. 2013

View full text Add to dashboard Cite

We report the synthesis of capsule-embedded reduced graphene oxide (rGO) by photocatalytic reduction in the presence of peanut shaped a-Fe 2 O 3 particles under visible light. This process is able to produce highly stabilized water dispersible rGO without the help of a stabilizer, which is suitable to make thin films on a glass substrate by the drop casting method. In addition, the evolution of the morphology with different visible light exposure times ranging from 5 to 120 minutes reveals that the catalyst leads to transformation of a few rGO sheets into capsules via a core-shell structure. These capsules are stable on the rGO sheet at a vacuum of 10 À9 Torr, but unstable under vacuum annealing at 400 C and 10 À5 Torr that created impressions on the rGO film. The bandgap of the capsule-embedded rGO decreases nonlinearly with the visible light exposure time; from 2.47 eV at 5 min to 1.73 eV at 120 min. The vacuum annealed rGO films on glass substrates show an electrical conductivity of 2000 S m À1 at 300 K and the conduction is dominated by two-dimensional variable range hopping. The formation of capsules is described based on electrostatic interactions in association with the dipole force of the monodispersed peanut shaped a-Fe 2 O 3 particles, whereas, the bandgap opening and high conductivity are attributed to the residual oxygen functional groups such as carbonyl (>C]O) and epoxy (C-O-C) on the rGO, in addition to the modulated surface morphology.

show abstract

“…X‐ray photoemission spectroscopy (XPS) is a powerful tool to characterize graphene derivatives and provides the composition and percentage of the functional groups present on the surface of the graphene oxide and reduced graphene oxide , . In the current case, XPS survey was used to confirm the reduction extent estimated by FT‐IR.…”

Section: Resultsmentioning

confidence: 99%

Modulation of Electrochemical Properties of Graphene Oxide by Photochemical Reduction Using UV-Light Emitting Diodes

et al. 2016

View full text Add to dashboard Cite

Electrodes that were chemically modified by reduced graphene oxide have properties that dependent on the synergy between the level of restoration of the sp2 structure and the functional groups. Because of this, the challenge in the chemistry of graphene is how to reach the equilibrium between electrical conductivity and specific interactions between the surface and molecular targets and how to tune it. In this work, a simple and effective method to modulate the electrochemical properties of reduced graphene oxide by photoreduction using UV‐light emitting diodes is reported. Moreover, we also succeeded in controlling the percentage of oxygenated groups and electrical conductivity, which reflects directly on the electrochemical behavior. The influence of the reduction extent is explored using photochemically reduced graphene oxide generated as a potential sensor for trace detection of dopamine, proving the efficiency and importance of this tunable reduction approach for device‐design development, mainly for the synergistic effect among electrical conductivity, π‐interaction and the amount of oxygenate functional groups.

show abstract

Chemoselective Photodeoxidization of Graphene Oxide Using Sterically Hindered Amines as Catalyst: Synthesis and Applications

Cited by 84 publications

References 56 publications

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Capsule-embedded reduced graphene oxide: synthesis, mechanism and electrical properties

Modulation of Electrochemical Properties of Graphene Oxide by Photochemical Reduction Using UV-Light Emitting Diodes

Contact Info

Product

Resources

About